价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | isc | |
型号/规格: | 2SA969 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -160V(Min)
·Good Linearity of hFE
·Complement to Type 2SC2239
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -160 | V |
VCEO | Collector-Emitter Voltage | -160 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -1.5 | A |
IE | Emitter Current- Continuous | 1.5 | A |
PC | Total Power Dissipation @ TC=25℃ | 25 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA ; IB= 0 | -160 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= -1mA ; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -0.5A; IB= -50mA |
|
| -1.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= -0.5A ; VCE= -5V |
|
| -1.0 | V |
ICBO | Collector Cutoff Current | VCB= -160V ; IE= 0 |
|
| -1.0 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -1.0 | μA |
hFE | DC Current Gain | IC= -0.1A ; VCE= -5V | 70 |
| 240 |
|
COB | Output Capacitance | IE= 0; VCB= -10V; ftest= 1MHz |
| 30 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -0.1A;VCE= -10V |
| 100 |
| MHz |
u hFEClassifications
O | Y |
70-140 | 120-240 |
"
DESCRIPTION ·High Voltage·DARLINGTON APPLICATIONS·High ruggedness electronic ignitions·High voltage ignition coil driver Absolute maximum ratings (Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage500VVCEOCollector-Emitter Voltage450VVEBOEmitter-Base Voltage5VICCollector Current15AICMCollector Current-peak30AIBBase Current1AIBMBase Current-peak5APCCollector Power Dissipation@TC=25℃60WTjJunction Temperature150℃TstgStorageTemperature Range-40~150℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance, Junction to Case2.08℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.1A; IB= 0; L= 10mH450 VVCE(sat)Collector-Emitter Saturation VoltageIC= 8 A; IB= 150mA 1.8VVBE(sat)Base-Emitter Saturation VoltageIC= 8 A; IB= 150mA 2.2VICESCollector Cutoff CurrentVCE= 500V;VBE= 0VCE= 500V;VBE= 0;Tj= 125℃ 1.05.0mAICEOCollector Cut...
DESCRIPTION ·High Breakdown Voltage-: VCBO= 1500V (Min)·High Switching Speed·High Reliability·Built-in Damper Diode APPLICATIONS·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 1500VVCEOCollector-Emitter Voltage 800VVEBOEmitter-Base Voltage 6VICCollector Current- Continuous5AICMCollector Current-Peak16APCCollector Power Dissipation@ TC=25℃60WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCE(sat)Collector-Emitter Saturation VoltageIC= 4A; IB= 0.8A 5.0VVBE(sat)Base-Emitter Saturation VoltageIC= 4A; IB= 0.8A 1.5VICBOCollector Cutoff CurrentVCB= 800V ; IE= 0 10μAIEBOEmitter Cutoff CurrentVEB= 4V ; IC= 040 200mAhFEDC Current GainIC= 1A ; VCE= 5V8 VEC...