价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SA1180 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -180V(Min.)
·High Power Dissipation
APPLICATIONS
·Designed for power switching amplifier and general purpose
applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -180 | V |
VCEO | Collector-Emitter Voltage | -180 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -10 | A |
IB | Base Current-Continuous | -4 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -25mA; IB= 0 | -180 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= -1mA; IE= 0 | -180 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -1mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -2.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -2.5 | V |
ICBO | Collector Cutoff Current | VCB= -180V; IE= 0 |
|
| -100 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -100 | μA |
hFE | DC Current Gain | IC= -5A ; VCE= -4V | 30 |
|
|
|
DESCRIPTION ·Excellent Safe Operating Area·DC Current Gain-: hFE=20-70@IC= 4A·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.1 V(Max)@ IC= 4A APPLICATIONS·Designed for general-purpose switching and amplifierapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage150VVCEOCollector-Emitter Voltage120VVEBOEmitter-Base Voltage7VICCollector Current-Continuous15AIBBase Current7APCCollector Power Dissipation@TC=25℃117WTJJunction Temperature200℃TstgStorage Temperature-65~200℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance,Junction to Case1.5℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINMAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC=200mA; IB= 0120 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= 4A; IB= 0.4A 1.1VVCE(sat)-2Collector-Emitter Saturation VoltageIC= 10A; IB= 3.3A 2.5VVBE(on)Base-E...
DESCRIPTION ·Low Collector Saturation Voltage-: VCE(sat)= -1.5V(Max.)@ IC= -5A·DC Current Gain-: hFE= 25-100 @IC= -2.5A·Complement to Type 2N4913 APPLICATIONS ·Designed for general purpose use in power amplifier andswitching circuits. SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-40VVCEOCollector-Emitter Voltage-40VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-5AIBBase Current-Continuous-1APCCollector Power Dissipation@TC=25℃87.5WTJJunction Temperature200℃TstgStorage Temperature-65~200℃ "