价 格: | 9.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | BD317 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 25(Min.)@IC= 5A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC= 8A
·Complement to Type BD318
APPLICATIONS
·Designed for high quality amplifiers operating up to 100 watts
into 8 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 100 | V |
VCEO | Collector-Emitter Voltage | 100 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 16 | A |
ICM | Collector Current-Peak | 20 | A |
IB | Base Current-Continuous | 5 | A |
PC | Collector Power Dissipation@TC=25℃ | 200 | W |
TJ | Junction Temperature | 200 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 0.875 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC=200mA; IB=0 | 100 | V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 8A; IB= 0.8A |
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 8A; IB= 0.8A |
| 1.8 | V |
VBE(on) | Base-Emitter On Voltage | IC= 8A; VCE= 2V |
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 100V; IB=0 |
| 1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= 7V; IC=0 |
| 1.0 | mA |
hFE-1 | DC Current Gain | IC= 5A; VCE= 4V | 25 |
|
|
hFE-2 | DC Current Gain | IC= 10A; VCE= 4V | 15 |
|
|
fT | Current Gain-Bandwidth Product | IC= 1A; VCE= 20V | 1 |
| MHz |
DESCRIPTION ·High Voltage: VCEV= 400V(Min)·Fast Switching Speed-: tf= 0.5μs(Max)·Low Saturation Voltage-: VCE(sat)= 1.0V(Max)@ IC= 6A APPLICATIONS·Designed for use in horizontal deflection output stagesof TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 400VVCEVCollector-Emitter Voltage 400VVCEOCollector-Emitter Voltage 200VVEBOEmitter-Base Voltage6VICCollector Current-Continuous7AICMCollector Current-Peak10AIBBase Current4APCCollector Power Dissipation@ TC=25℃60WTJJunctionTemperature150℃TstgStorageTemperature Range-65~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 100mA ;IB= 0200 VVCE(sat)Collector-Emitter Saturation VoltageIC= 6A; IB= 1.2A 1.0VVBE(sat)Base-Emitter Saturati...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -60V(Min)·LowCollector-Emitter Saturation Voltage-: VCE(sat)= -1.0V(Max) @IC= -2.0A·Complement to Type 2SD315 APPLICATIONS·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage -60VVCEOCollector-Emitter Voltage -60VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-4AICMCollector Current-Peak-10APCCollector Power Dissipation@ TC=25℃35WTJJunctionTemperature150℃TstgStorageTemperature Range-40~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCE(sat)Collector-Emitter Saturation VoltageIC= -2A; IB= -0.2A -1.0VVBE(on)Base-Emitter On VoltageIC= -1A; VCE= -2V -1.5VICBOCollector Cutoff CurrentVCB= -20V; IE= 0 -100μAIEBOEmitter Cutoff CurrentVEB= -4V; IC= 0 -1mAhFE-1DC Cu...