无锡固电ISC 供应三极管2SB509
| 价 格： | 10.00 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | ISC | |
| 型号/规格： | 2SB509 | |
| 应用范围： | 放大 | |
| 材料： | 硅(Si) | |
| 极性： | PNP型 | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 金属封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·LowCollector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -2.0A
·Complement to Type 2SD315
APPLICATIONS
·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -60 | V |
VCEO | Collector-Emitter Voltage | -60 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -4 | A |
ICM | Collector Current-Peak | -10 | A |
PC | Collector Power Dissipation @ TC=25℃ | 35 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -40~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -2A; IB= -0.2A |
|
| -1.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -1A; VCE= -2V |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -20V; IE= 0 |
|
| -100 | μA |
IEBO | Emitter Cutoff Current | VEB= -4V; IC= 0 |
|
| -1 | mA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -2V | 40 |
| 320 |
|
hFE-2 | DC Current Gain | IC= -0.1A ; VCE= -2V | 40 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A; VCE= -5V;ftest= 1.0MHz |
| 8 |
| MHz |
u hFE-1Classifications
C | D | E | F |
40-80 | 60-120 | 100-200 | 160-320 |
- 所属城市：江苏 无锡
- [联系时请说明来自维库仪器仪表网]
- 联系人： 谈增琴
- 电话：0510-85346980
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