价 格: | 4.50 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SB691 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SD727
APPLICATIONS
·Designed for low frequency power amplifier and power
switching applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -130 | V |
VCEO | Collector-Emitter Voltage | -80 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -5 | A |
PC | Collector Power Dissipation @ TC=25℃ | 60 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -30mA; IB= 0 | -80 |
| V | |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= -1mA; IE= 0 | -130 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= -1mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -3A; IB= -0.3A |
|
| -1.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= -1A; VCE= -5V |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -130V; IE=0 |
|
| -100 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC=0 |
|
| -100 | μA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -5V | 40 |
| 200 |
|
hFE-2 | DC Current Gain | IC= -3A; VCE= -5V | 20 |
|
|
|
COB | Output Capacitance | IE=0; VCB= -10V; ftest= 1.0MHz |
| 190 |
| pF |
fT | Current-Gain—Bandwidth Product | IC=-1A; VCE= -5V |
| 7 |
| MHz |
DESCRIPTION ·Excellent Safe Operating Area·DC Current Gain-hFE= 25(Min.)@IC= 5A·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.0 V(Max)@ IC= 8A·Complement to Type BD318 APPLICATIONS·Designed for high quality amplifiers operating up to 100 wattsinto 8 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage100VVCEOCollector-Emitter Voltage100VVEBOEmitter-Base Voltage7VICCollector Current-Continuous16AICMCollector Current-Peak20AIBBase Current-Continuous5APCCollector Power Dissipation@TC=25℃200WTJJunction Temperature200℃TstgStorage Temperature-65~200℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance,Junction to Case0.875℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINMAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC=200mA; IB=0100 VVCE(sat)Collector-Emitter Saturation VoltageIC= 8A; IB= 0.8A...
DESCRIPTION ·High Voltage: VCEV= 400V(Min)·Fast Switching Speed-: tf= 0.5μs(Max)·Low Saturation Voltage-: VCE(sat)= 1.0V(Max)@ IC= 6A APPLICATIONS·Designed for use in horizontal deflection output stagesof TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 400VVCEVCollector-Emitter Voltage 400VVCEOCollector-Emitter Voltage 200VVEBOEmitter-Base Voltage6VICCollector Current-Continuous7AICMCollector Current-Peak10AIBBase Current4APCCollector Power Dissipation@ TC=25℃60WTJJunctionTemperature150℃TstgStorageTemperature Range-65~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 100mA ;IB= 0200 VVCE(sat)Collector-Emitter Saturation VoltageIC= 6A; IB= 1.2A 1.0VVBE(sat)Base-Emitter Saturati...