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无锡固电ISC供应2SB691三极管

价 格: 4.50
是否提供加工定制:
品牌/商标:ISC
型号/规格:2SB691
应用范围:放大
材料:硅(Si)
极性:PNP型
结构:平面型
封装形式:直插型
封装材料:塑料封装

DESCRIPTION                                             

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -80V(Min)

·Good Linearity of hFE

·Wide Area of Safe Operation

·Complement to Type 2SD727

 

 

APPLICATIONS

·Designed for low frequency power amplifier and power

switching applications.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

-130

V

VCEO

Collector-Emitter Voltage                        

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-5

A

PC

Collector Power Dissipation

@ TC=25

60

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

 


ELECTRICAL CHARACTERISTICS


TC=25unless otherwise specified


SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -30mA; IB= 0

-80

 

 

V

V(BR)CBO

Collector-BaseBreakdownVoltage                     

IC= -1mA; IE= 0

-130

 

 

V

V(BR)EBO

Emitter-BaseBreakdownVoltage

IE= -1mA; IC= 0

-5

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -3A; IB= -0.3A

 

 

-1.5

V

VBE(on)

Base-Emitter On Voltage

IC= -1A; VCE= -5V

 

 

-1.5

V

ICBO

Collector Cutoff Current

VCB= -130V; IE=0

 

 

-100

μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

 

 

-100

μA

hFE-1

DC Current Gain

IC= -1A; VCE= -5V

40

 

200

 

hFE-2

DC Current Gain

IC= -3A; VCE= -5V

20

 

 

 

COB

Output Capacitance

IE=0; VCB= -10V; ftest= 1.0MHz

 

190

 

pF

fT

Current-Gain—Bandwidth Product

IC=-1A; VCE= -5V

 

7

 

MHz


 


 


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无锡固电半导体股份有限公司
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