无锡固电ISC供应2SD1632三极管
| 价 格： | 4.50 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | ISC | |
| 型号/规格： | 2SD1632 | |
| 应用范围： | 放大 | |
| 材料： | 硅(Si) | |
| 极性： | NPN型 | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 塑料封装 |
DESCRIPTION
·Collector-Base Breakdown Voltage-
: VCBO= 1500V (Min.)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output applications
.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector- Base Voltage | 1500 | V |
VCES | Collector-Emitter Voltage | 1500 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 4 | A |
ICM | Collector Current-Peak | 15 | A |
IBM | Base Current-Peak | 3.5 | A |
PC | Collector Power Dissipation @ TC=25℃ | 70 | W |
TJ | JunctionTemperature | 130 | ℃ |
Tstg | StorageTemperature Range | -55~130 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT | |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 500mA; IC= 0 | 5 |
|
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 3A; IB= 1A |
|
| 1.0 | V | |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 3A; IB= 1A |
|
| 1.5 | V | |
ICBO | Collector Cutoff Current | VCB= 750V; IE= 0 VCB= 1500V; IE= 0 |
|
| 50 1.0 | μA mA | |
hFE | DC Current Gain | IC= 3A; VCE= 10V | 5 |
| 15 |
| |
VECF | C-E Diode Forward Voltage | IF= 4A |
|
| 2.2 | V | |
Switching times | |||||||
tstg | Storage Time | IC= 3A; IB(end)= 1A; Lleak= 5μH |
|
| 9.0 | μs | |
tf | Fall Time |
|
| 0.8 | μs | ||
"
- 所属城市：江苏 无锡
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- 联系人： 谈增琴
- 电话：0510-85346980
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