| 价 格: | 9.00 | |
| 是否提供加工定制: | 是 | |
| 品牌/商标: | ISC | |
| 型号/规格: | 2SC4706 | |
| 应用范围: | 放大 | |
| 材料: | 硅(Si) | |
| 极性: | NPN型 | |
| 结构: | 平面型 | |
| 封装形式: | 直插型 | |
| 封装材料: | 塑料封装 |
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 600V(Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 900 | V |
VCEO | Collector-Emitter Voltage | 600 | V |
VEBO | Emitter-Base voltage | 7 | V |
IC | Collector Current-Continuous | 14 | A |
ICM | Collector Current-Peak | 28 | A |
IB | Base Current-Continuous | 7 | A |
PC | Collector Power Dissipation @ TC=25℃ | 130 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA ; IB= 0 | 600 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 7A; IB= 1.4A |
|
| 0.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 7A; IB= 1.4A |
|
| 1.2 | V |
ICBO | Collector Cutoff Current | VCB= 800V ; IE= 0 |
|
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 7V; IC= 0 |
|
| 0.1 | mA |
hFE | DC Current Gain | IC= 7A ; VCE= 4V | 10 |
| 25 |
|
COB | Output Capacitance | IE= 0 ; VCB= 10V; ftest=1.0MHz |
| 160 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= -1.5A ; VCE= 12V |
| 6 |
| MHz |
Switching Times | ||||||
ton | Turn-on Time | IC= 7A,IB1= 1.05A; IB2= -3.5A RL= 35.7Ω; VCC= 250V |
|
| 1.0 | μs |
tstg | Storage Time |
|
| 5.0 | μs | |
tf | Fall Time |
|
| 0.7 | μs | |
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -50V(Min.)·Complement to Type 2SC521 APPLICATIONS·Power amplifier applications.·Power switching applications.·DC-DC converter applications.·Regulator applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-70VVCEOCollector-Emitter Voltage-50VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -7AIBBase Current-2APCCollector Power Dissipation@TC=25℃50WTjJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA; IB= 0-50 VVCE(sat)Collector-Emitter Saturation VoltageIC= -5A; IB= -1A -2.0VVBE(sat)Base-EmitterSaturationVoltageIC= -5A; IB= -1A -2.5VICBOCollector Cutoff CurrentVCB= -70V; IE= 0 -0.1mAIEBOEmitter Cutoff CurrentVEB= -5V; IC= 0 -5mAhFE-1DC Current GainIC= ...
DESCRIPTION ·High Current Capability·Good Linearity of hFE·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min.) APPLICATIONS·Designed for audio and general purpose applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-100VVCEOCollector-Emitter Voltage-100VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -10APCCollector Power Dissipation@TC=25℃95WTjJunction Temperature150℃TstgStorage Temperature-55~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -30mA; IB= 0-100 VV(BR)CBOCollector-Base Breakdown VoltageIC= -1mA; IE= 0-100 VV(BR)EBOEmitter-Base Breakdown VoltageIE= -1mA; IC= 0-5 VVCE(sat)Collector-Emitter Saturation VoltageIC= -5A; IB= -0.5A -1.2VVBE(sat)Base-Emitter Saturation VoltageIC= -5A; IB= -0.5A -1.8VICBOCollector Cutoff CurrentVCB= -100V; IE= 0 -10μAIEBOEmitt...