价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SA658 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min.)
·Complement to Type 2SC521
APPLICATIONS
·Power amplifier applications.
·Power switching applications.
·DC-DC converter applications.
·Regulator applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -70 | V |
VCEO | Collector-Emitter Voltage | -50 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -7 | A |
IB | Base Current | -2 | A |
PC | Collector Power Dissipation @TC=25℃ | 50 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA; IB= 0 | -50 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -1A |
|
| -2.0 | V |
VBE(sat) | Base-EmitterSaturationVoltage | IC= -5A; IB= -1A |
|
| -2.5 | V |
ICBO | Collector Cutoff Current | VCB= -70V; IE= 0 |
|
| -0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -5 | mA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -5V | 30 |
| 300 |
|
hFE-2 | DC Current Gain | IC= -5A; VCE= -5V | 15 |
|
|
|
COB | Collector Output Capacitance | IE= 0; VCB= -10V; f= 1MHz |
| 150 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -10V |
| 5 |
| MHz |
DESCRIPTION ·High Current Capability·Good Linearity of hFE·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min.) APPLICATIONS·Designed for audio and general purpose applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-100VVCEOCollector-Emitter Voltage-100VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -10APCCollector Power Dissipation@TC=25℃95WTjJunction Temperature150℃TstgStorage Temperature-55~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -30mA; IB= 0-100 VV(BR)CBOCollector-Base Breakdown VoltageIC= -1mA; IE= 0-100 VV(BR)EBOEmitter-Base Breakdown VoltageIE= -1mA; IC= 0-5 VVCE(sat)Collector-Emitter Saturation VoltageIC= -5A; IB= -0.5A -1.2VVBE(sat)Base-Emitter Saturation VoltageIC= -5A; IB= -0.5A -1.8VICBOCollector Cutoff CurrentVCB= -100V; IE= 0 -10μAIEBOEmitt...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min)·High Switching Speed APPLICATIONS·Designed for switching regulator and general purposeapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage500VVCEOCollector-Emitter Voltage400VVEBOEmitter-Base Voltage10VICCollector Current-Continuous 12AICMCollector Current-Peak 24AIBBase Current-Continuous 4APCCollector Power Dissipation@TC=25℃100WTJJunction Temperature150℃TstgStorage Temperature-55~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 25mA; IB= 0400 VVCE(sat)Collector-Emitter Saturation VoltageIC= 7A; IB= 1.4A 0.5VVBE(sat)Base-Emitter Saturation VoltageIC= 7A; IB= 1.4A 1.3VICBOCollector Cutoff CurrentVCB= 500V; IE= 0 0.1mAIEBOEmitter Cutoff CurrentVEB= 10V; IC= 0 0.1mAhFEDC Current GainIC= 7A; VC...