价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SA1028 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·High Current Capability
·Good Linearity of hFE
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.)
APPLICATIONS
·Designed for audio and general purpose applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -10 | A |
PC | Collector Power Dissipation @TC=25℃ | 95 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -30mA; IB= 0 | -100 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= -1mA; IE= 0 | -100 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -1mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -1.2 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -1.8 | V |
ICBO | Collector Cutoff Current | VCB= -100V; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -10 | μA |
hFE | DC Current Gain | IC= -0.1A; VCE= -2V | 50 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -10V |
| 60 |
| MHz |
"
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min)·High Switching Speed APPLICATIONS·Designed for switching regulator and general purposeapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage500VVCEOCollector-Emitter Voltage400VVEBOEmitter-Base Voltage10VICCollector Current-Continuous 12AICMCollector Current-Peak 24AIBBase Current-Continuous 4APCCollector Power Dissipation@TC=25℃100WTJJunction Temperature150℃TstgStorage Temperature-55~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 25mA; IB= 0400 VVCE(sat)Collector-Emitter Saturation VoltageIC= 7A; IB= 1.4A 0.5VVBE(sat)Base-Emitter Saturation VoltageIC= 7A; IB= 1.4A 1.3VICBOCollector Cutoff CurrentVCB= 500V; IE= 0 0.1mAIEBOEmitter Cutoff CurrentVEB= 10V; IC= 0 0.1mAhFEDC Current GainIC= 7A; VC...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -140V(Min)·Good Linearity of hFE·High Current Capability·Wide Area of Safe Operation·Complement to Type 2SD1047 APPLICATIONS·Recommend for 60W audio frequency amplifier outputstage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage -160VVCEOCollector-Emitter Voltage -140VVEBOEmitter-Base Voltage-6VICCollector Current-Continuous-12AICPCollector Current-Pulse-15APCCollector Power Dissipation@ TC=25℃100WTJJunctionTemperature150℃TstgStorageTemperature Range-40~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA ; RBE=∞-140 VV(BR)CBOCollector-BaseBreakdownVoltage IC= -5mA; IE= 0-160 VV(BR)EBOEmitter-BaseBreakdownVoltageIE=...