价 格: | 4.10 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SB817 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
·Good Linearity of hFE
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SD1047
APPLICATIONS
·Recommend for 60W audio frequency amplifier output
stage applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -160 | V |
VCEO | Collector-Emitter Voltage | -140 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current-Continuous | -12 | A |
ICP | Collector Current-Pulse | -15 | A |
PC | Collector Power Dissipation @ TC=25℃ | 100 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -40~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA ; RBE=∞ | -140 |
| V | |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= -5mA; IE= 0 | -160 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= -5mA; IC= 0 | -6 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5.0A; IB= -0.5A |
|
| -2.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= -1A ; VCE= -5V |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -80V ; IE=0 |
|
| -100 | μA |
IEBO | Emitter Cutoff Current | VEB= -4V; IC=0 |
|
| -100 | μA |
hFE-1 | DC Current Gain | IC= -1A ; VCE= -5V | 60 |
| 200 |
|
hFE-2 | DC Current Gain | IC= -6A ; VCE= -5V | 20 |
|
|
|
COB | Output Capacitance | IE=0 ; VCB= -10V;ftest= 1.0MHz |
| 300 |
| pF |
fT | Current-Gain—Bandwidth Product | IC=-1A ; VCE= -5V |
| 15 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | IC= -1A ,RL= 20Ω, IB1= -IB2= -0.1A,VCC=-20V |
| 0.25 |
| μs |
tstg | Storage Time |
| 1.61 |
| μs | |
tf | Fall Time |
| 0.53 |
| μs |
u hFE-1Classifications
D | E |
60-120 | 100-200 |
DESCRIPTION·High DC Current Gain: hFE= 1000(Min.)@ IC= 15A·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)·LowCollector Saturation Voltage: VCE(sat)= 1.5V(Max.)@IC= 15A APPLICATIONS·Designed for high current switching application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage100VVCEOCollector-Emitter Voltage100VVEBOEmitter-Base Voltage5VICCollector Current-Continuous15AIBBase Current- Continuous1APCCollector Power Dissipation@TC=25℃100WTjJunction Temperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 50mA, IB= 0100 VVCE(sat)Collector-Emitter Saturation VoltageIC= 15A ,IB= 25mA 1.5VVBE(sat)Base-Emitter Saturation VoltageIC= 15A ,IB= 25mA 2.2VICBOCollector Cutoff currentVCB= 100V, IE= 0 100μAIEBOEmitter Cutoff CurrentVEB= 5V; IC= 0 10mAhFEDC Current GainIC...
DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 375V(Min)·Low Collector-Emitter Saturation Voltage-: VCE(sat)= 1.5V(Max.) @ IC= 2.5A APPLICATIONS·Designed for use in operating in color TV receivers choppersupplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage800VVCEOCollector-Emitter Voltage375VVEBOEmitter-Base Voltage10VICCollector Current-Continuous6AICMCollector Current-Peak 8AIBBase Current-Continuous3APCCollector Power Dissipation@ TC=25℃75WTJJunctionTemperature200℃TstgStorageTemperature Range-65~200℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance, Junction to Case2.33℃/WELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.1A; IB= 0; L= 25mH375 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= 2.5A; IB= 0.5A 1.5VVCE(sat)-2Collector-...