| 价 格: | 3.80 | |
| 是否提供加工定制: | 是 | |
| 品牌/商标: | isc/iscsemi | |
| 型号/规格: | 2SD1654 | |
| 应用范围: | 放大 | |
| 材料: | 硅(Si) | |
| 极性: | NPN型 | |
| 集电极允许电流ICM: | 3.5(A) | |
| 集电极耗散功率PCM: | 50(W) | |
| 结构: | 扩散型 | |
| 封装形式: | TO-3PML | |
| 封装材料: | 塑料封装 |
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Color TV horizontal deflection output applications.
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 100mA; RBE=∞ | 800 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= 5mA; IE= 0 | 1500 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 200mA; IC= 0 | 7 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 2.5A; IB= 0.8A |
|
| 8.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 2.5A; IB= 0.8A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 800V ; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 1.0 | mA |
hFE | DC Current Gain | IC= 0.5A; VCE= 5V | 8 |
|
|
|
tf | Fall Time | IC= 3A, IB1= 0.8A; IB2= -1.6A |
|
| 0.7 | μs |
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 600V(Min)·High Switching Speed·High Reliability APPLICATIONS·Designed for switching regulator and general purposeapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 900VVCEOCollector-Emitter Voltage 600VVEBOEmitter-Base voltage7VICCollector Current-Continuous14AICMCollector Current-Peak28AIBBase Current-Continuous7APCCollector Power Dissipation@ TC=25℃130WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 10mA ; IB= 0600 VVCE(sat)Collector-Emitter Saturation VoltageIC= 7A; IB= 1.4A 0.5VVBE(sat)Base-Emitter Saturation VoltageIC= 7A; IB= 1.4A 1.2VICBOCollector Cutoff CurrentVCB= 800V ; IE= 0 0.1mAIE...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -50V(Min.)·Complement to Type 2SC521 APPLICATIONS·Power amplifier applications.·Power switching applications.·DC-DC converter applications.·Regulator applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-70VVCEOCollector-Emitter Voltage-50VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -7AIBBase Current-2APCCollector Power Dissipation@TC=25℃50WTjJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA; IB= 0-50 VVCE(sat)Collector-Emitter Saturation VoltageIC= -5A; IB= -1A -2.0VVBE(sat)Base-EmitterSaturationVoltageIC= -5A; IB= -1A -2.5VICBOCollector Cutoff CurrentVCB= -70V; IE= 0 -0.1mAIEBOEmitter Cutoff CurrentVEB= -5V; IC= 0 -5mAhFE-1DC Current GainIC= ...