| 价 格: | 3.00 | |
| 是否提供加工定制: | 是 | |
| 品牌/商标: | ISC | |
| 型号/规格: | 2SB1344 | |
| 应用范围: | 放大 | |
| 材料: | 硅(Si) | |
| 极性: | PNP型 | |
| 结构: | 平面型 | |
| 封装形式: | 直插型 | |
| 封装材料: | 塑料封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·HighDC Current Gain-
: hFE=1000(Min)@ (VCE= -3V, IC= -2A)
·Complement to Type 2SD2025
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -7 | V |
IC | Collector Current-Continuous | -8 | A |
ICM | Collector Current-Peak | -10 | A |
PC | Collector Power Dissipation @Ta=25℃ | 2 | W |
Collector Power Dissipation @TC=25℃ | 30 | ||
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -5mA; IB= 0 | -100 |
| V | |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= -50μA; IE= 0 | -100 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -3A; IB= -6mA |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -100V; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -3 | mA |
hFE | DC Current Gain | IC= -2A; VCE= -3V | 1000 |
| 20000 |
|
COB | Output Capacitance | IE= 0; VCB= -10V; ftest= 1MHz |
| 90 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= 0.5A; VCE= -5V; ftest= 10MHz |
| 12 |
| MHz |
DESCRIPTION ·Collector-Emitter Breakdown Voltage-V(BR)CEO= 150V(Min)·High Power Dissipation·High Current Capacity·Complement to Type 2SA1633 APPLICATIONS·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 150VVCEOCollector-Emitter Voltage 150VVEBOEmitter-Base Voltage5VICCollector Current-Continuous10APCCollector Power Dissipation@ TC=25℃100WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 25mA; IB= 0150 VV(BR)CBOCollector-BaseBreakdownVoltage IC= 0.1mA; IE= 0150 VV(BR)EBOEmitter-BaseBreakdownVoltageIE= 0.1mA; IC= 05 VVCE(sat)Collector-Emitter Saturation VoltageIC= 7A; IB= 0.7A 1.0VICBOCollector Cutoff Curr...
DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min)·High Switching Speed·High ReliabilityAPPLICATIONS·Color TV horizontal deflection output applications.ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown Voltage IC= 100mA; RBE=∞800 VV(BR)CBOCollector-Base Breakdown Voltage IC= 5mA; IE= 01500 VV(BR)EBOEmitter-Base Breakdown VoltageIE= 200mA; IC= 07 VVCE(sat)Collector-Emitter Saturation VoltageIC= 2.5A; IB= 0.8A 8.0VVBE(sat)Base-Emitter Saturation VoltageIC= 2.5A; IB= 0.8A 1.5VICBOCollector Cutoff CurrentVCB= 800V ; IE= 0 10μAIEBOEmitter Cutoff CurrentVEB= 5V; IC= 0 1.0mAhFEDC Current GainIC= 0.5A; VCE= 5V8 tfFall TimeIC= 3A, IB1= 0.8A; IB2= -1.6A 0.7μs