| 价 格: | 10.00 | |
| 是否提供加工定制: | 是 | |
| 品牌/商标: | ISC | |
| 型号/规格: | 2SA744 | |
| 应用范围: | 放大 | |
| 材料: | 硅(Si) | |
| 极性: | PNP型 | |
| 结构: | 平面型 | |
| 封装形式: | 直插型 | |
| 封装材料: | 金属封装 |
DESCRIPTION
·High Power Dissipation-
: PC= 70W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
·Complement to Type 2SC1402
APPLICATIONS
·Designed for general purpose applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -80 | V |
VCEO | Collector-Emitter Voltage | -80 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current-Continuous | -8 | A |
IB | Base Current-Continuous | -3 | A |
PC | Collector Power Dissipation @TC=25℃ | 70 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA ;IB= 0 | -80 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -3A; IB= -0.3A |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -80V; IE= 0 |
|
| -1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= -6V; IC= 0 |
|
| -1.0 | mA |
hFE | DC Current Gain | IC= -3A ; VCE= -4V | 30 |
|
|
|
fT | Current-Gain—Bandwidth Product | IE= 0.5A ; VCE= -12V |
| 15 |
| MHz |
Switching times | ||||||
tr | Rise Time | IC= -3A ,RL= 4Ω, VCC=-12V IB1= -0.2A; IB2= 0.1A |
| 1.2 |
| μs |
tstg | Storage Time |
| 2.0 |
| μs | |
tf | Fall Time |
| 0.55 |
| μs | |
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min)·HighDC Current Gain-: hFE=1000(Min)@ (VCE= -3V, IC= -2A)·Complement to Type 2SD2025 APPLICATIONS·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-100VVCEOCollector-Emitter Voltage-100VVEBOEmitter-Base Voltage-7VICCollector Current-Continuous -8AICMCollector Current-Peak -10APCCollector Power Dissipation@Ta=25℃2WCollector Power Dissipation@TC=25℃30TJJunction Temperature150℃TstgStorage Temperature-55~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -5mA; IB= 0-100 VV(BR)CBOCollector-BaseBreakdownVoltageIC= -50μA; IE= 0-100 VVCE(sat)Collector-Emitter Saturation VoltageIC= -3A; IB= -6mA -1.5VICBOCollector Cutoff CurrentVCB= -100V; IE= 0 -10μAIEBOEmitt...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-V(BR)CEO= 150V(Min)·High Power Dissipation·High Current Capacity·Complement to Type 2SA1633 APPLICATIONS·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 150VVCEOCollector-Emitter Voltage 150VVEBOEmitter-Base Voltage5VICCollector Current-Continuous10APCCollector Power Dissipation@ TC=25℃100WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 25mA; IB= 0150 VV(BR)CBOCollector-BaseBreakdownVoltage IC= 0.1mA; IE= 0150 VV(BR)EBOEmitter-BaseBreakdownVoltageIE= 0.1mA; IC= 05 VVCE(sat)Collector-Emitter Saturation VoltageIC= 7A; IB= 0.7A 1.0VICBOCollector Cutoff Curr...