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无锡固电ISC 供应BD318 三极管 直插三极管 可控硅三极管

价 格: 9.00
是否提供加工定制:
品牌/商标:ISC
型号/规格:BD318
应用范围:放大
材料:硅(Si)
极性:PNP型
结构:平面型
封装形式:直插型
封装材料:金属封装

DESCRIPTION                                             

·Excellent Safe Operating Area

·DC Current Gain-hFE= 25(Min.)@IC= -5A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= -1.0 V(Max)@ IC= -8A

·Complement to Type BD317

 

 

APPLICATIONS

·Designed for high quality amplifiers operating up to 100 watts

into 8 ohm load.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-16

A

ICM

Collector Current-Peak

-20

A

IB

Base Current-Continuous

-5

A

PC

Collector Power Dissipation@TC=25

200

W

TJ

Junction Temperature

200

Tstg

Storage Temperature

-65~200

 

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.875

/W

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC=-200mA; IB=0

-100

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -8A; IB= -0.8A

 

-1.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -8A; IB= -0.8A

 

-1.8

V

VBE(on)

Base-Emitter On Voltage

IC= -8A; VCE= -2V

 

-1.5

V

ICBO

Collector Cutoff Current

VCB= -80V; IB= 0

 

-1.0

mA

IEBO

Emitter Cutoff Current

VEB= -7V; IC= 0

 

-1.0

mA

hFE-1

DC Current Gain

IC= -5A; VCE= -4V

25

 

 

hFE-2

DC Current Gain

IC= -10A; VCE= -4V

15

 

 

fT

Current Gain-Bandwidth Product

IC= -1A; VCE= -20V

1

 

MHz

 

 

无锡固电半导体股份有限公司
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  • 所属城市:江苏 无锡
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