| 价 格: | 9.00 | |
| 是否提供加工定制: | 是 | |
| 品牌/商标: | ISC | |
| 型号/规格: | BD318 | |
| 应用范围: | 放大 | |
| 材料: | 硅(Si) | |
| 极性: | PNP型 | |
| 结构: | 平面型 | |
| 封装形式: | 直插型 | |
| 封装材料: | 金属封装 |
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 25(Min.)@IC= -5A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0 V(Max)@ IC= -8A
·Complement to Type BD317
APPLICATIONS
·Designed for high quality amplifiers operating up to 100 watts
into 8 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -7 | V |
IC | Collector Current-Continuous | -16 | A |
ICM | Collector Current-Peak | -20 | A |
IB | Base Current-Continuous | -5 | A |
PC | Collector Power Dissipation@TC=25℃ | 200 | W |
TJ | Junction Temperature | 200 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 0.875 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC=-200mA; IB=0 | -100 | V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -8A; IB= -0.8A |
| -1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -8A; IB= -0.8A |
| -1.8 | V |
VBE(on) | Base-Emitter On Voltage | IC= -8A; VCE= -2V |
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -80V; IB= 0 |
| -1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= -7V; IC= 0 |
| -1.0 | mA |
hFE-1 | DC Current Gain | IC= -5A; VCE= -4V | 25 |
|
|
hFE-2 | DC Current Gain | IC= -10A; VCE= -4V | 15 |
|
|
fT | Current Gain-Bandwidth Product | IC= -1A; VCE= -20V | 1 |
| MHz |
DESCRIPTION ·High Power Dissipation-: PC= 70W(Max.)@TC=25℃·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -80V(Min.)·Complement to Type 2SC1402 APPLICATIONS·Designed for general purpose applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-80VVCEOCollector-Emitter Voltage-80VVEBOEmitter-Base Voltage-6VICCollector Current-Continuous -8AIBBase Current-Continuous -3APCCollector Power Dissipation@TC=25℃70WTjJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA ;IB= 0-80 VVCE(sat)Collector-Emitter Saturation VoltageIC= -3A; IB= -0.3A -1.5VICBOCollector Cutoff CurrentVCB= -80V; IE= 0 -1.0mAIEBOEmitter Cutoff CurrentVEB= -6V; IC= 0 -1.0mAhFEDC Current GainIC= -3A ; VCE= -4V30 fTCurrent-Gain—Bandwidth ProductIE= 0.5A ; VCE= -12V 15 M...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min)·HighDC Current Gain-: hFE=1000(Min)@ (VCE= -3V, IC= -2A)·Complement to Type 2SD2025 APPLICATIONS·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-100VVCEOCollector-Emitter Voltage-100VVEBOEmitter-Base Voltage-7VICCollector Current-Continuous -8AICMCollector Current-Peak -10APCCollector Power Dissipation@Ta=25℃2WCollector Power Dissipation@TC=25℃30TJJunction Temperature150℃TstgStorage Temperature-55~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -5mA; IB= 0-100 VV(BR)CBOCollector-BaseBreakdownVoltageIC= -50μA; IE= 0-100 VVCE(sat)Collector-Emitter Saturation VoltageIC= -3A; IB= -6mA -1.5VICBOCollector Cutoff CurrentVCB= -100V; IE= 0 -10μAIEBOEmitt...