| 价 格: | 10.00 | |
| 是否提供加工定制: | 是 | |
| 品牌/商标: | ISC | |
| 型号/规格: | 2SC3527 | |
| 应用范围: | 放大 | |
| 材料: | 硅(Si) | |
| 极性: | NPN型 | |
| 结构: | 平面型 | |
| 封装形式: | 直插型 | |
| 封装材料: | 塑料封装 |
DESCRIPTION
·Low Collector Saturation Voltage
·High Collector Current
·Good Linearity of hFE
APPLICATIONS
·Designed forswitching regulator and high voltage
switching applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base voltage | 7 | V |
IC | Collector Current-Continuous | 15 | A |
ICM | Collector Current-Peak | 25 | A |
IB | Base Current-Continuous | 6 | A |
PC | Collector Power Dissipation @ TC=25℃ | 100 | W |
Collector Power Dissipation @ Ta=25℃ | 3 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 0.5A; L= 25mH | 400 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 7A; IB= 1.4A |
|
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 7A; IB= 1.4A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 500V; IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 7V; IC= 0 |
|
| 100 | μA |
hFE-1 | DC Current Gain | IC= 2A; VCE= 5V | 15 |
|
|
|
hFE-2 | DC Current Gain | IC= 7A; VCE= 5V | 10 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 1A; VCE= 10V; f= 1MHz |
| 15 |
| MHz |
Switching times | ||||||
ton | Turn-On Time | IC= 7A; IB1= 1.4A, IB2= -1.4A; VCC= 125V |
|
| 1.0 | μs |
tstg | Storage Time |
|
| 2.5 | μs | |
tf | Fall Time |
|
| 1.0 | μs | |
DESCRIPTION ·Excellent Safe Operating Area·DC Current Gain-hFE= 25(Min.)@IC= -5A·Collector-Emitter Saturation Voltage-: VCE(sat)= -1.0 V(Max)@ IC= -8A·Complement to Type BD317 APPLICATIONS·Designed for high quality amplifiers operating up to 100 wattsinto 8 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-100VVCEOCollector-Emitter Voltage-100VVEBOEmitter-Base Voltage-7VICCollector Current-Continuous-16AICMCollector Current-Peak-20AIBBase Current-Continuous-5APCCollector Power Dissipation@TC=25℃200WTJJunction Temperature200℃TstgStorage Temperature-65~200℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance,Junction to Case0.875℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINMAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC=-200mA; IB=0-100 VVCE(sat)Collector-Emitter Saturation VoltageIC= -...
DESCRIPTION ·High Power Dissipation-: PC= 70W(Max.)@TC=25℃·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -80V(Min.)·Complement to Type 2SC1402 APPLICATIONS·Designed for general purpose applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-80VVCEOCollector-Emitter Voltage-80VVEBOEmitter-Base Voltage-6VICCollector Current-Continuous -8AIBBase Current-Continuous -3APCCollector Power Dissipation@TC=25℃70WTjJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA ;IB= 0-80 VVCE(sat)Collector-Emitter Saturation VoltageIC= -3A; IB= -0.3A -1.5VICBOCollector Cutoff CurrentVCB= -80V; IE= 0 -1.0mAIEBOEmitter Cutoff CurrentVEB= -6V; IC= 0 -1.0mAhFEDC Current GainIC= -3A ; VCE= -4V30 fTCurrent-Gain—Bandwidth ProductIE= 0.5A ; VCE= -12V 15 M...