| 价 格: | 10.00 | |
| 是否提供加工定制: | 是 | |
| 品牌/商标: | ISC | |
| 型号/规格: | 2SA657 | |
| 应用范围: | 放大 | |
| 材料: | 硅(Si) | |
| 极性: | PNP型 | |
| 结构: | 平面型 | |
| 封装形式: | 直插型 | |
| 封装材料: | 金属封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
·Complement to Type 2SC520
APPLICATIONS
·Power amplifier applications.
·Power switching applications.
·DC-DC converter applications.
·Regulator applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -80 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -7 | A |
IB | Base Current | -2 | A |
PC | Collector Power Dissipation @TC=25℃ | 50 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA; IB= 0 | -80 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -1A |
|
| -2.0 | V |
VBE(sat) | Base-EmitterSaturationVoltage | IC= -5A; IB= -1A |
|
| -2.5 | V |
ICBO | Collector Cutoff Current | VCB= -100V; IE= 0 |
|
| -0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -5 | mA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -5V | 30 |
| 300 |
|
hFE-2 | DC Current Gain | IC= -5A; VCE= -5V | 15 |
|
|
|
COB | Collector Output Capacitance | IE= 0; VCB= -10V; f= 1MHz |
| 150 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -10V |
| 5 |
| MHz |
DESCRIPTION ·Low Collector Saturation Voltage·High Collector Current·Good Linearity of hFE APPLICATIONS·Designed forswitching regulator and high voltageswitching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 500VVCEOCollector-Emitter Voltage 400VVEBOEmitter-Base voltage7VICCollector Current-Continuous15AICMCollector Current-Peak25AIBBase Current-Continuous6APCCollector Power Dissipation@ TC=25℃100WCollector Power Dissipation@ Ta=25℃3TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.5A; L= 25mH400 VVCE(sat)Collector-Emitter Saturation VoltageIC= 7A; IB= 1.4A 1.0VVBE(sat)Base-Emitter Saturation VoltageIC= 7A; IB= 1.4A 1.5VICBOCollector Cutoff CurrentVCB...
DESCRIPTION ·Excellent Safe Operating Area·DC Current Gain-hFE= 25(Min.)@IC= -5A·Collector-Emitter Saturation Voltage-: VCE(sat)= -1.0 V(Max)@ IC= -8A·Complement to Type BD317 APPLICATIONS·Designed for high quality amplifiers operating up to 100 wattsinto 8 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-100VVCEOCollector-Emitter Voltage-100VVEBOEmitter-Base Voltage-7VICCollector Current-Continuous-16AICMCollector Current-Peak-20AIBBase Current-Continuous-5APCCollector Power Dissipation@TC=25℃200WTJJunction Temperature200℃TstgStorage Temperature-65~200℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance,Junction to Case0.875℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINMAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC=-200mA; IB=0-100 VVCE(sat)Collector-Emitter Saturation VoltageIC= -...