价 格: | 面议 | |
型号/规格: | BSC0901NS,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,30V,100A | |
品牌/商标: | INFINEON(英飞凌) | |
封装形式: | QFN-8 5*6/PG-TDSON-8 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 5000/盘 |
型 号:BSC0901NS | ||||
标 记: 0901NS | ||||
类 型:场效应管 | ||||
通道极性: N通道 | ||||
封 装:QFN-8 5*6/PG-TDSON-8 | ||||
备 注: | ||||
Parameter | Symbol | Conditions | Value | Unit |
Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=1mA | 30 | V |
Continuous drain current | ID | VGS=10V,TC=25℃ | 100 | A |
Pulsed drain current | IDM | TC=25℃ | 400 | A |
Avalanche energy, single pulse | EAS | ID=50A, RGS=25Ω | 80 | mJ |
Gate source voltage | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25℃ | 69 | W |
Gate threshold voltage | VGS(th) | VDS=VGS,ID=250µA | 2.2 | V |
Drain-source on-state resistance | RDS(on) | VGS=10V, ID=50A | 1.9 | mΩ |
Input capacitance | Ciss | VGS=0V,VDS=15V, f=1MHz | 2800 | PF |
Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=30A | 140 | S |
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BSC014NE2LSI,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,100A,0.0014Ω Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=10mA 25 V Continuous drain current ID VGS=10V,TC=25℃ 100 A Pulsed drain current IDM TC=25℃ 400 A Avalanche energy, single pulse EAS ID=50A, RGS=25Ω 50 mJ Power dissipation Ptot TC=25℃ 74 W ...
产品型号:BSC118N10NSG 封装:QFN-8 5*6/PG-TDSON-8 源漏极间雪崩电压V(br)dss(V):100 夹断电压VGS(V):±20 雪崩能量EAS(mJ):155 漏极电流Id(A):71 源漏极导通电阻rDS(on)(Ω):0.0118 @VGS = 10 V 开启电压VGS(TH)(V):4 功率PD(W):114 极间电容Ciss(PF):2800 通道极性:N通道 低频跨导gFS(s):65 温度(℃): -55 ~150 描述:100V,71A, N-channel OptiMOS Power-MOSFET Features ? N-channel, normal level ? Excellent gate charge x RDS(on) product (FOM) ? Very low on-resistance RDS(on) ? 150 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC for target application ? Ideal for high-frequency switching and synchronous rectification (产品图片,产品参数,产品PDF等产品相关信息在线了解\查询\下载.)