价 格: | 面议 | |
型号/规格: | STP75NF68 | |
品牌/商标: | ST(意法半导体) | |
封装形式: | TO-220 | |
环保类别: | 无铅环保型 | |
安装方式: | 直插式 | |
包装方式: | 1000/盒 |
STP75NF68,TO-220,DIP/MOS,N场,68V,80A,0.014Ω
Application
■ DC-DC converters (DC - DC转换器)
■ Switching applications (开关应用)
■ Motor Control(电机控制)
Parameter | Symbol | Conditions | Value | Unit |
Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=250µA | 68 | V |
Continuous drain current | ID | TC=25℃ | 80 | A |
Pulsed drain current | IDM | TC=25℃ | 320 | A |
Power dissipation | Ptot | TC=25℃ | 190 | W |
Gate source voltage | VGS | ±20 | V | |
Gate threshold voltage | VGS(th) | VDS=VGS,ID=250µA | 4 | V |
Avalanche energy, single pulse | EAS | ID=25A, RGS=25Ω | 700 | mJ |
Drain-source on-state resistance | RDS(on) | VGS=10V, ID=40A | 14 | mΩ |
Input capacitance | Ciss | VGS=0V,VDS=15V, f=1MHz | 2550 | PF |
Transconductance | gfs | VDS=15V, ID =40A | 60 | S |
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型 号:BSC0901NS 标 记: 0901NS 类 型:场效应管 通道极性: N通道 封 装:QFN-8 5*6/PG-TDSON-8 备 注: Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=1mA 30 V Continuous drain current ID VGS=10V,TC=25℃ 100 A Pulsed drain current IDM TC=25℃ 400 A Avalanche energy, single pulse EAS ID=50A, RGS=25Ω ...
BSC014NE2LSI,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,100A,0.0014Ω Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=10mA 25 V Continuous drain current ID VGS=10V,TC=25℃ 100 A Pulsed drain current IDM TC=25℃ 400 A Avalanche energy, single pulse EAS ID=50A, RGS=25Ω 50 mJ Power dissipation Ptot TC=25℃ 74 W ...