价 格: | 面议 | |
型号/规格: | BSC020N03LSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,30V,100A,0.002Ω | |
品牌/商标: | INFINEON(英飞凌) | |
封装形式: | QFN-8 5*6/PG-TDSON-8 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 5000/盘 |
产品型号:BSC020N03LSG
封装:QFN-8 5*6/PG-TDSON-8
源漏极间雪崩电压V(br)dss(V):30
夹断电压VGS(V):±20
雪崩能量EAS(mJ):180
漏极电流Id(A):100
源漏极导通电阻rDS(on)(Ω):0.002 @VGS = 10 V
开启电压VGS(TH)(V):2.2
功率PD(W):96
极间电容Ciss(PF):5400 TYP
通道极性:N通道
低频跨导gFS(s):130
温度(℃): -55 ~150
描述:30V,100A, N-channel OptiMOS Power-MOSFET
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BSC883N03MSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,34V,98A,0.0038Ω Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=1mA 30 V Continuous drain current ID VGS=10V,TC=25℃ 98 A Pulsed drain current IDM TC=25℃ 392 A Power dissipation Ptot TC=25℃ 57 W Gate source voltage VGS ±20 V Gate threshold volt...
型 号:BSC046N02KSG 标 记: 046N02KS 类 型:场效应管 通道极性: N通道 封 装:QFN-8 5*6/PG-TDSON-8 备 注: Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=1mA 20 V Continuous drain current ID VGS=10V,TC=25℃ 80 A Pulsed drain current IDM TC=25℃ 200 A Avalanche energy, single pulse EAS ID=50A, RGS=25Ω 151 mJ Gate source voltage VGS ...