价 格: | 面议 | |
型号/规格: | BSC034N03LSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,30V,100A,0.0034Ω | |
品牌/商标: | INFINEON(英飞凌) | |
封装形式: | QFN-8 5*6/PG-TDSON-8 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 5000/盘 |
型 号:BSC034N03LSG | ||||
标 记: 034N03LS | ||||
类 型:场效应管 | ||||
通道极性: N通道 | ||||
封 装:QFN-8 5*6/PG-TDSON-8 | ||||
备 注: | ||||
Parameter | Symbol | Conditions | Value | Unit |
Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=1mA | 30 | V |
Continuous drain current | ID | VGS=10V,TC=25℃ | 100 | A |
Pulsed drain current | IDM | TC=25℃ | 400 | A |
Avalanche energy, single pulse | EAS | ID=50A, RGS=25Ω | 55 | mJ |
Gate source voltage | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25℃ | 57 | W |
Gate threshold voltage | VGS(th) | VDS=VGS,ID=250µA | 2.2 | V |
Drain-source on-state resistance | RDS(on) | VGS=10V, ID=30A | 3.4 | mΩ |
Input capacitance | Ciss | VGS=0V,VDS=15V, f=1MHz | 3200 | PF |
Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=30A | 90 | S |
产品型号:BSZ160N10NS3G 封装:QFN-8 3.3*3.3/PG-TSDSON-8 源漏极间雪崩电压V(br)dss(V):100 夹断电压VGS(V):±20 雪崩能量EAS(mJ):80 漏极电流Id(A):40 源漏极导通电阻rDS(on)(Ω):0.016 @VGS = 10 V 开启电压VGS(TH)(V):3.5 功率PD(W):63 极间电容Ciss(PF):1300 通道极性:N通道 低频跨导gFS(s):33 温度(℃): -55 ~150 描述:100V,40A,OptiMOS Power-Transistor Features ? Ideal for high frequency switching ? Optimized technology for DC/DC converters ? Excellent gate charge x RDS(on) product (FOM) ? N-channel, normal level ? 100% avalanche tested ? Pb-free plating; RoHS compliant ? Qualified according to JEDEC for target applications (产品图片,产品参数,产品PDF等产品相关信息在线了解\查询\下载.)
型 号:BSC057N08NS3G 标 记: 057N08NS 类 型:场效应管 通道极性: N通道 封 装:QFN-8 5*6/PG-TDSON-8 备 注:,现货供应 Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=1mA 80 V Continuous drain current ID VGS=10V,TC=25℃ 100 A Pulsed drain current IDM TC=25℃ 400 A Avalanche energy, single pulse EAS ID=50A, RGS=2...