三极管2N5401
| 价 格： | 0.05 |
| 是否提供加工定制：是 | 品牌：TXF | 型号：2N5401 |
| 应用范围：放大 | 材料：硅(Si) | 集电极允许电流ICM：0.6（A） |
| 集电极耗散功率PCM：0.625（W） | 截止频率fT：100（MHz） | 结构：平面型 |
| 封装形式：TO-92 | 封装材料：塑料封装 |
2N5401
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch
for applications requiring high voltages. Sourced from Process 74.
2N5401 MMBT5401
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 150 V
VCBO Collector-Base Voltage 160 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics TA = 25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol Characteristic Max Units
2N5401 *MMBT5401
PD Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
RqJC Thermal Resistance, Junction to Case 83.3 °C/W
RqJA Thermal Resistance, Junction to Ambient 200 357 °C/W
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三极管2N5551
信息内容：是否提供加工定制：是品牌：TXF型号：2N5551应用范围：放大材料：硅(Si)集电极允许电流ICM：0.6（A） 集电极耗散功率PCM：0.625（W） 截止频率fT：100（MHz） 结构：平面型封装形式：TO-92封装材料：塑料封装 2N5551 NPN General Purpose AmplifierThis device is designed for general purpose high voltage amplifiersand gas discharge display driving. Sourced from Process 16.Absolute Maximum Ratings* TA = 25°C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 160 VVCBO Collector-Base Voltage 180 VVEBO Emitter-Base Voltage 6.0 VIC Collector Current - Continuous 600 mATJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °CThermal Char...
厂价直销E13003节能灯.电子镇流器三极管
信息内容：是否提供加工定制：是品牌：仙童. ST型号：E13003应用范围：高反压材料：硅极性：NPN型集电极允许电流ICM：1.5-3（A） 集电极耗散功率PCM：-（W） 截止频率fT：-（MHz） 结构：平面型封装形式：TO-220封装材料：塑料封装 MJE13003 NPN EPITAXIAL SILICON TRANSISTORNPN SILICON POWERTRANSISTORS DESCRIPTIONThese devices are designed for high–voltage, high–speedpower switching inductive circuits where fall time is critical. Theyare particularly suited for 115 and 220V SWITCHMODE .FEATURES* Reverse Biased SOA with Inductive Load @ Tc=100℃* Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100℃Typical tc = 290ns @ 1A, 100℃.* 700V Blocking CapabilityAPPLICATIONS* Switching Regulator’s, Inverters* Motor Controls* Solenoid/Relay drivers* Deflection circuits
