三极管2N5551
| 价 格： | 0.05 |
| 是否提供加工定制：是 | 品牌：TXF | 型号：2N5551 |
| 应用范围：放大 | 材料：硅(Si) | 集电极允许电流ICM：0.6（A） |
| 集电极耗散功率PCM：0.625（W） | 截止频率fT：100（MHz） | 结构：平面型 |
| 封装形式：TO-92 | 封装材料：塑料封装 |
2N5551
NPN General Purpose Amplifier
This device is designed for general purpose high voltage amplifiers
and gas discharge display driving. Sourced from Process 16.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 160 V
VCBO Collector-Base Voltage 180 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 600 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5551 *MMBT5551
PD Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
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厂价直销E13003节能灯.电子镇流器三极管
信息内容：是否提供加工定制：是品牌：仙童. ST型号：E13003应用范围：高反压材料：硅极性：NPN型集电极允许电流ICM：1.5-3（A） 集电极耗散功率PCM：-（W） 截止频率fT：-（MHz） 结构：平面型封装形式：TO-220封装材料：塑料封装 MJE13003 NPN EPITAXIAL SILICON TRANSISTORNPN SILICON POWERTRANSISTORS DESCRIPTIONThese devices are designed for high–voltage, high–speedpower switching inductive circuits where fall time is critical. Theyare particularly suited for 115 and 220V SWITCHMODE .FEATURES* Reverse Biased SOA with Inductive Load @ Tc=100℃* Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100℃Typical tc = 290ns @ 1A, 100℃.* 700V Blocking CapabilityAPPLICATIONS* Switching Regulator’s, Inverters* Motor Controls* Solenoid/Relay drivers* Deflection circuits
厂价批发E13003节能灯.充电器三极管
信息内容：是否提供加工定制：是品牌：TXF.CLJ型号：E13003应用范围：高反压材料：硅极性：NPN型集电极允许电流ICM：1.5（A） 集电极耗散功率PCM：-（W） 截止频率fT：-（MHz） 结构：平面型封装形式：直插型封装材料：塑料封装 MJE13003FEATURESPower dissipationPCM : 1.25 W Tamb=25Collector currentICM : 1.5 ACollector-base voltageV(BR)CBO : 700 V Tamb=25 unless otherwise specifiedParameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO Ic= 1000 A IE=0 700 VCollector-emitter breakdown voltage V(BR)CEO Ic= 10 mA IB=0 400 VEmitter-base breakdown voltage V(BR)EBO IE= 1000 A IC=0 9 VCollector cut-off current ICBO VCB= 700 V IE=0 1000 μACollector cut-off current ICEO VCE= 400 V IB=0 500 μAEmitter cut-off current IEBO VEB= 9 V IC=0 1000 μAHFE 1 VCE= 10 V, IC= 150 mA 8 40DC current gain(note)HFE 2 VCE= 10 V, IC= 0.5 mA 5Collector-emitter saturation voltage VCE(sat) IC=1000mA,IB= 250 mA 1 VBase-emitter saturation voltage VBE(sat) IC=1000mA, IB= 250mA 1.2 VBase-emitter volta...
