厂价直销E13003节能灯.电子镇流器三极管
| 价 格： | 0.45 |
| 是否提供加工定制：是 | 品牌：仙童. ST | 型号：E13003 |
| 应用范围：高反压 | 材料：硅 | 极性：NPN型 |
| 集电极允许电流ICM：1.5-3（A） | 集电极耗散功率PCM：-（W） | 截止频率fT：-（MHz） |
| 结构：平面型 | 封装形式：TO-220 | 封装材料：塑料封装 |
MJE13003 NPN EPITAXIAL SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V SWITCHMODE .
FEATURES
* Reverse Biased SOA with Inductive Load @ Tc=100℃
* Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100℃
Typical tc = 290ns @ 1A, 100℃.
* 700V Blocking Capability
APPLICATIONS
* Switching Regulator’s, Inverters
* Motor Controls
* Solenoid/Relay drivers
* Deflection circuits
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 许惠谦
- 电话：0755-82533222
- 传真：0755-82533222
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厂价批发E13003节能灯.充电器三极管
信息内容：是否提供加工定制：是品牌：TXF.CLJ型号：E13003应用范围：高反压材料：硅极性：NPN型集电极允许电流ICM：1.5（A） 集电极耗散功率PCM：-（W） 截止频率fT：-（MHz） 结构：平面型封装形式：直插型封装材料：塑料封装 MJE13003FEATURESPower dissipationPCM : 1.25 W Tamb=25Collector currentICM : 1.5 ACollector-base voltageV(BR)CBO : 700 V Tamb=25 unless otherwise specifiedParameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO Ic= 1000 A IE=0 700 VCollector-emitter breakdown voltage V(BR)CEO Ic= 10 mA IB=0 400 VEmitter-base breakdown voltage V(BR)EBO IE= 1000 A IC=0 9 VCollector cut-off current ICBO VCB= 700 V IE=0 1000 μACollector cut-off current ICEO VCE= 400 V IB=0 500 μAEmitter cut-off current IEBO VEB= 9 V IC=0 1000 μAHFE 1 VCE= 10 V, IC= 150 mA 8 40DC current gain(note)HFE 2 VCE= 10 V, IC= 0.5 mA 5Collector-emitter saturation voltage VCE(sat) IC=1000mA,IB= 250 mA 1 VBase-emitter saturation voltage VBE(sat) IC=1000mA, IB= 250mA 1.2 VBase-emitter volta...
供应可控硅BT134-600E
信息内容：LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT-500 -600 -800VDRM Repetitive peak off-state - 5001 6001 800 VvoltagesIT(RMS) RMS on-state current full sine wave; Tmb £ 107 °C - 4 AITSM Non-repetitive peak full sine wave; Tj = 25 °C prior toon-state current surget = 20 ms - 25 At = 16.7 ms - 27 AI2t I2t for fusing t = 10 ms - 3.1 A2sdIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;on-state current after dIG/dt = 0.2 A/mstriggering T2 G - 50 A/msT2 G- - 50 A/msT2- G- - 50 A/msT2- G - 10 A/msIGM Peak gate current - 2 AVGM Peak gate voltage - 5 VPGM Peak gate power - 5 WPG(AV) Average gate power over any 20 ms period - 0.5 WTstg Storage temperature -40 150 °CTj Operating junction - 125 °C
