三极管2SC1815
| 价 格： | 0.04 |
| 是否提供加工定制：是 | 品牌：TXF | 型号：2SC1815 |
| 应用范围：放大 | 材料：硅(Si) | 极性：PNP型 |
| 集电极允许电流ICM：0.15（A） | 集电极耗散功率PCM：0.4（W） | 截止频率fT：80（MHz） |
| 结构：平面型 | 封装形式：TO-92 | 封装材料：塑料封装 |
2SC1815
Audio Frequency Amplifier & High
Frequency OSC
• Complement to KSA1015
• Collector-Base Voltage : VCBO= 50V
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 150 mA
IB Base Current 50 mA
PC Collector Power Dissipation 400 mW
TJ Junction Temperature 125 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB=60V, IE=0 0.1 μA
IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 μA
hFE1
hFE2
DC Current Gain VCE=6V, IC=2mA
VCE=6V, IC=150mA
70
25
700
VCE (sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.1 0.25 V
VBE (sat) Base-Emitter Saturation Voltage IC=100mA, IB=10mA 1.0 V
fT Current Gain Bandwidth Product VCE=10V, IC=1mA 80 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 2.0 3.0 pF
NF Noise Figure VCE=6V, IC=0.1mA
RS=10kΩ, f=1Hz
1.0 1.0 dB
Classification O Y GR L
hFE1 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700
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三极管2N5401
信息内容：是否提供加工定制：是品牌：TXF型号：2N5401应用范围：放大材料：硅(Si)集电极允许电流ICM：0.6（A） 集电极耗散功率PCM：0.625（W） 截止频率fT：100（MHz） 结构：平面型封装形式：TO-92封装材料：塑料封装2N5401 PNP General Purpose AmplifierThis device is designed as a general purpose amplifier and switchfor applications requiring high voltages. Sourced from Process 74.2N5401 MMBT5401Absolute Maximum Ratings* TA = 25°C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 150 VVCBO Collector-Base Voltage 160 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 200 mATJ, Tstg Operating and Storage Junction Temperature Range -55 to +150...
三极管2N5551
信息内容：是否提供加工定制：是品牌：TXF型号：2N5551应用范围：放大材料：硅(Si)集电极允许电流ICM：0.6（A） 集电极耗散功率PCM：0.625（W） 截止频率fT：100（MHz） 结构：平面型封装形式：TO-92封装材料：塑料封装 2N5551 NPN General Purpose AmplifierThis device is designed for general purpose high voltage amplifiersand gas discharge display driving. Sourced from Process 16.Absolute Maximum Ratings* TA = 25°C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 160 VVCBO Collector-Base Voltage 180 VVEBO Emitter-Base Voltage 6.0 VIC Collector Current - Continuous 600 mATJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °CThermal Char...
