三极管2N3906
| 价 格： | 0.04 |
| 是否提供加工定制：是 | 品牌：TXF | 型号：2N3906 |
| 应用范围：放大 | 材料：硅(Si) | 极性：PNP型 |
| 集电极允许电流ICM：0.2（A） | 集电极耗散功率PCM：0.625（W） | 截止频率fT：250（MHz） |
| 结构：平面型 | 封装形式：TO-92 | 封装材料：塑料封装 |
2N3906
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 mA to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 许惠谦
- 电话：0755-82533222
- 传真：0755-82533222
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三极管2SC1815
信息内容：是否提供加工定制：是品牌：TXF型号：2SC1815应用范围：放大材料：硅(Si)极性：PNP型集电极允许电流ICM：0.15（A） 集电极耗散功率PCM：0.4（W） 截止频率fT：80（MHz） 结构：平面型封装形式：TO-92封装材料：塑料封装 2SC1815Audio Frequency Amplifier & HighFrequency OSC• Complement to KSA1015• Collector-Base Voltage : VCBO= 50V NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25°C unless otherwise notedElectrical Characteristics Ta=25°C unless otherwise notedhFE ClassificationSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC Collector Current 150 mAIB Base Current 50 mAPC Collector Power Dissipation 400 mWTJ Junction Temperature 125 °CTSTG Storage Temperature -55 ~ 150 °CSymbol Parameter Test Condition Min. Typ. Max. UnitsICBO Collector Cut-off Current VCB=60V, IE=0 0.1 μAIEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 μAhFE1hFE2DC Current Gain VCE=6V, IC=2mAVCE=6V, IC=150m...
三极管2N5401
信息内容：是否提供加工定制：是品牌：TXF型号：2N5401应用范围：放大材料：硅(Si)集电极允许电流ICM：0.6（A） 集电极耗散功率PCM：0.625（W） 截止频率fT：100（MHz） 结构：平面型封装形式：TO-92封装材料：塑料封装2N5401 PNP General Purpose AmplifierThis device is designed as a general purpose amplifier and switchfor applications requiring high voltages. Sourced from Process 74.2N5401 MMBT5401Absolute Maximum Ratings* TA = 25°C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 150 VVCBO Collector-Base Voltage 160 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 200 mATJ, Tstg Operating and Storage Junction Temperature Range -55 to +150...
