品牌:FAIRCHILD/仙童 | 型号:FDB6030BL | 种类:绝缘栅(MOSFET) |
沟道类型:N沟道 | 导电方式:增强型 | 用途:L/功率放大 |
封装外形:SMD(SO)/表面封装 | 材料:N-FET硅N沟道 | 开启电压:30v(V) |
夹断电压:50(V) | 跨导:10(μS) | 极间电容:1160(pF) |
低频噪声系数:10(dB) | 漏极电流:100(mA) | 耗散功率:500(mW) |
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
品牌:FAIRCHILD/仙童型号:FDB8880-NL种类:绝缘栅(MOSFET)沟道类型:N沟道导电方式:增强型用途:D/变频换流封装外形:SMD(SO)/表面封装材料:N-FET硅N沟道开启电压:30(V) 夹断电压:50(V) 跨导:10(μS) 极间电容:1240(pF) 低频噪声系数:10(dB) 漏极电流:500(mA) 耗散功率:550(mW) FeaturesrDS(ON) = 14.5m? , VGS= 4.5V, ID = 40ArDS(ON) = 11.6m? , VGS= 10V, ID = 40AHigh performance trench technology for extremely lowrDS(ON)Low gate chargeHigh power and current handling capabilityApplicationsDC/DC converters应用程序直流/直流转换器
品牌:FAIRCHILD/仙童型号:FDD6670AL-NL种类:绝缘栅(MOSFET)沟道类型:N沟道导电方式:增强型用途:DC/直流封装外形:SMD(SO)/表面封装材料:N-FET硅N沟道开启电压:30(V) 夹断电压:50(V) 跨导:10(μS) 极间电容:3845(pF) 低频噪声系数:10(dB) 漏极电流:100(mA) 耗散功率:100(mW) 原装现货FDD6670AL30V N-Channel PowerTrench? MOSFETGeneral DescriptionThis N-Channel MOSFET has been designedspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized forlow gate charge, low RDS( ON) and fast switching speed. Applications• DC/DC converter • Motor Drives"