品牌:IR/国际整流器 | 型号:IRFPE50 | 种类:绝缘栅(MOSFET) |
沟道类型:N沟道 | 导电方式:增强型 | 用途:DC/直流 |
封装外形:CER-DIP/陶瓷直插 | 材料:N-FET硅N沟道 | 开启电压:20(V) |
夹断电压:400(V) | 跨导:20(μS) | 极间电容:3100(pF) |
低频噪声系数:200(dB) | 漏极电流:200(mA) | 耗散功率:1900(mW) |
原装大量现货
N-FET | 900 V | 6,7 A | 190 W | - | 1,6 Ohm |
品牌:SGS法意电子型号:STP75NF75种类:绝缘栅(MOSFET)沟道类型:N沟道导电方式:增强型用途:DC/直流封装外形:P-DIT/塑料双列直插材料:N-FET硅N沟道开启电压:75(V) 夹断电压:40(V) 跨导:20(μS) 极间电容:3700(pF) 低频噪声系数:20(dB) 漏极电流:50(mA) 耗散功率:10(mW) 产品应用:这一系列的MOSFET,极大的减小了输入电容和栅极充电电流,因此它们非常适合用于通信和计算机的高性能。高频率独立DC-DC转换器的初级变换摸块之中;同时,它们也可以用于任何低栅极驱动的电路中,如:电动自行车充电电路DescriptionThis Power MOSFET series realized withSTMicroelectronics unique STripFET™ processhas specifically been designed to minimize inputcapacitance and gate charge. It is thereforesuitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DCconverters for Telecom and Computerapplications. It is also intended for anyapplications with low gate drive requirements.dzsc/18/7929/18792983.jpg
品牌:AO型号:AO3402种类:绝缘栅(MOSFET)沟道类型:N沟道导电方式:增强型用途:S/开关封装外形:SMD(SO)/表面封装材料:N-FET硅N沟道开启电压:30(V) 夹断电压:12(V) 低频跨导:20(μS) 极间电容:390(pF) 低频噪声系数:15(dB) 漏极电流:20(mA) 耗散功率:20(mW) General DescriptionThe AO3402 uses advanced trench technology toprovide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 2.5V. Thisdevice is suitable for use as a load switch or in PWMapplications. AO3402L( Green Product ) is offered ina lead-free package.FeaturesVDS (V) = 30VID = 4 ARDS(ON)< 55m? (VGS = 10V)RDS(ON) < 70m? (VGS = 4.5V)RDS(ON) < 110m? (VGS = 2.5V)