价 格: | 0.10 | |
型号/规格: | 19N10 | |
品牌/商标: | UTC(t台湾友顺) | |
封装形式: | TO-252 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
DESCRIPTION
The UTC 100V N-Channel enhancement mode power field
effect transistors(MOSFET) are produced by UTC!ˉs planar stripe,
DMOS technology which has been tailored especially in the
avalanche and commutation mode to minimize on-state resistance,
provide superior switching performance, and withstand high energy
pulse. They are suited for low voltage applications such as audio
amplifier,high efficiency switching DC/DC converters, and DC motor
control. FEATURES
* R = 0.1 @V = 10 V
DS(ON) GS
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( C
= typical 32pF )
RSS
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested Application ● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors(MOSFET) are produced by UTC!ˉs planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control. FEATURES * R = 0.1 @V = 10 V DS(ON) GS * Ultra low gate charge ( typical 19nC ) * Low reverse transfer Capacitance ( C = typical 32pF ) RSS * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness