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100V 场效应管 UTC 19N10

价 格: 0.10
型号/规格:19N10
品牌/商标:UTC(t台湾友顺)
封装形式:TO-252
环保类别:普通型
安装方式:贴片式
包装方式:盒带编带包装
功率特征:

DESCRIPTION
The UTC 100V N-Channel enhancement mode power field
effect transistors(MOSFET) are produced by UTC!ˉs planar stripe,
DMOS technology which has been tailored especially in the
avalanche and commutation mode to minimize on-state resistance,
provide superior switching performance, and withstand high energy
pulse. They are suited for low voltage applications such as audio
amplifier,high efficiency switching DC/DC converters, and DC motor
control.   FEATURES
* R  = 0.1 @V  = 10 V
DS(ON) GS
* Ultra low gate charge ( typical 19nC ) 
* Low reverse transfer Capacitance ( C
 = typical 32pF )
RSS
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness  

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General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested Application ● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)

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100V 场效应管 UTC 19N10

信息内容:

DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors(MOSFET) are produced by UTC!ˉs planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control. FEATURES * R = 0.1 @V = 10 V DS(ON) GS * Ultra low gate charge ( typical 19nC ) * Low reverse transfer Capacitance ( C = typical 32pF ) RSS * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness

详细内容>>

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