酷MOS管 NCE8N65 贴片8N60(完美替代英飞凌47N60）
| 价 格： | 0.10 | |
| 型号/规格： | NCE8N65 | |
| 品牌/商标： | NCE（新洁能） | |
| 封装形式： | TO-252 | |
| 环保类别： | 普通型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 管装 | |
| 功率特征： | |
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 于晶
- 电话：0755-29743120
- 传真：0755-29743152-808
- 手机：13802706767
- QQ ：
100V 场效应管 UTC 19N10
信息内容：DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors(MOSFET) are produced by UTC!ˉs planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control. FEATURES * R = 0.1 @V = 10 V DS(ON) GS * Ultra low gate charge ( typical 19nC ) * Low reverse transfer Capacitance ( C = typical 32pF ) RSS * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness
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