价 格: | 0.10 | |
型号/规格: | 19N10 | |
品牌/商标: | UTC(t台湾友顺) | |
封装形式: | TO-252 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
DESCRIPTION
The UTC 100V N-Channel enhancement mode power field
effect transistors(MOSFET) are produced by UTC!ˉs planar stripe,
DMOS technology which has been tailored especially in the
avalanche and commutation mode to minimize on-state resistance,
provide superior switching performance, and withstand high energy
pulse. They are suited for low voltage applications such as audio
amplifier,high efficiency switching DC/DC converters, and DC motor
control. FEATURES
* R = 0.1 @V = 10 V
DS(ON) GS
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( C
= typical 32pF )
RSS
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. Amplifier / Comparator: Audio Amplifiers、 Operational Amplifier Voltage Comparator Power Management: Combo IC、DDR Termination Regulators FET Bias Controllers Inverting DC-DC Converter Li-Battery Protection or Charger IC Linear Regulators、PWM Controller Low Dropout Linear Regulators Power Factor Control、White LED Driver Shunt Reference Regulators Step Down Switching Regulators Step-Up DC-DC Converter and Controller Supervisory Circuit、USB Power Switch Voltage Detection and System Reset ICHall ICs Darlington Transistors Dual Chip Transistors: Complex Bipolar Transistors Complex Digital Transistors Analog Switches: Analog Multiplexers, Demultiplexer ICs Video Signal Switch Special Application ICs: A-D or D-A...
50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. FEATURES * RDS(ON) =23mΩ@VGS= 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability