价 格: | 0.10 | |
型号/规格: | 50N06 | |
品牌/商标: | UTC(t台湾友顺) | |
封装形式: | TO-252 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
FEATURES
* RDS(ON) =23mΩ@VGS= 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES * RDS(ON) = 0.29Ω @VGS = -10V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) =5Ω@VGS= 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness