三极管 UTC 2SD1691L
| 价 格： | 0.10 | |
| 型号/规格： | 2SD1691L | |
| 品牌/商标： | UTC(台湾友顺） | |
| 封装形式： | TO-126 | |
| 环保类别： | 普通型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 散装 | |
| 功率特性： | | |
| 频率特性： | | |
| 极性： | |
VCBO -60 V
VCEO -60 V/ DC IC -5 A
Pulse(Note 2) ICP -8 A
2SD1691:LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
?? FEATURES
*High Power Dissipation
*Complementary to 2SB1151
2SB1151：LOW COLLECTOR
SATURATION VOLTAGE
LARGE CURRENT
?? FEATURES
*High Power Dissipation
*Complementary to 2SD1691
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ST品牌30V低导通阻值低压N-MOS管 STS10N3LH5
信息内容：FeaturesType VDSS RDS(on) max IDSTS10N3LH5 30 V 0.021 Ω 10 A ■ RDS(on) * Qg industry benchmark■ Extremely low on-resistance RDS(on)■ Very low switching gate charge■ High avalanche ruggedness■ Low gate drive power lossesApplication■ Switching applicationsDescriptionThis STripFET™V Power MOSFET technology isamong the latest improvements, which have beenespecially tailored to achieve very low on-stateresistance providing also one of the best-in-classFOM.
IR品牌低阻值低压MOS管 SI4410DY
信息内容：*一直都有现货，并且特价供应！ Si4410DYPbF HEXFET Power MOSFET VDSS = 30V RDS(on) = 0.0135ΩN-Channel MOSFETLow On-ResistanceLow Gate ChargeSurface MountLogic Level DriveLead-FreeParameter Max. UnitsRθJA Maximum Junction-to-Ambient 50 °C/WThermal ResistanceThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low onresistanceand low gate charge inherent to thistechnology make this device ideal for low voltage orbattery driven power conversion applicationsThe SO-8 package with copper leadframe offersenhanced thermal characteristics that allow powerdissipation of greater that 800mW in typical boardmount applications.
