ST品牌30V低导通阻值低压N-MOS管 STS10N3LH5
| 价 格： | 0.10 | |
| 型号/规格： | STS10N3LH5 | |
| 品牌/商标： | ST（意法半导体） | |
| 封装形式： | SOP-8 | |
| 环保类别： | 普通型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 盒带编带包装 | |
| 功率特征： | |
Features
Type VDSS RDS(on) max ID
STS10N3LH5 30 V 0.021 Ω 10 A
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
- 所属城市：广东 深圳
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- 联系人： 于晶
- 电话：0755-29743120
- 传真：0755-29743152-808
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IR品牌低阻值低压MOS管 SI4410DY
信息内容：*一直都有现货，并且特价供应！ Si4410DYPbF HEXFET Power MOSFET VDSS = 30V RDS(on) = 0.0135ΩN-Channel MOSFETLow On-ResistanceLow Gate ChargeSurface MountLogic Level DriveLead-FreeParameter Max. UnitsRθJA Maximum Junction-to-Ambient 50 °C/WThermal ResistanceThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low onresistanceand low gate charge inherent to thistechnology make this device ideal for low voltage orbattery driven power conversion applicationsThe SO-8 package with copper leadframe offersenhanced thermal characteristics that allow powerdissipation of greater that 800mW in typical boardmount applications.
现货供10毫欧级高品质30V/10A贴片MOS管仙童 FDS6690
信息内容：大批现货特价供应！ FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFETFeaturesAbsolute Maximum Ratings TA = 25oC unless other wise notedSymbol Parameter FDS6690 UnitsVDSS Drain-Source Voltage 30 VVGSS Gate-Source Voltage ±20 VID Drain Current - Continuous (Note 1a) 10 A - Pulsed 50PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2(Note 1c) 1TJ,TSTG Operating and Storage Temperature Range -55 to 150 °CTHERMAL CHARACTERISTICSRqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/WRqJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W FDS6690 Rev.C10 A, 30 V. RDS(ON) = 0.0135 W @ VGS = 10 VRDS(ON) = 0.0200 W @ VGS = 4.5 V.Optimized for use in switching DC/DC converters withPWM controllers.Very fast switching .Low gate charge (Qg typ = 13 nC).
