IR品牌低阻值低压MOS管 SI4410DY
| 价 格： | 0.10 | |
| 型号/规格： | SI4410DY | |
| 品牌/商标： | IR | |
| 封装形式： | SOP-8 | |
| 环保类别： | 普通型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 盒带编带包装 | |
| 功率特征： | |
*一直都有现货，并且特价供应！ Si4410DYPbF HEXFET Power MOSFET VDSS = 30V RDS(on) = 0.0135Ω
N-Channel MOSFET
Low On-Resistance
Low Gate Charge
Surface Mount
Logic Level Drive
Lead-Free
Parameter Max. Units
RθJA Maximum Junction-to-Ambient 50 °C/W
Thermal Resistance
This N-channel HEXFET Power MOSFET is
produced using International Rectifier's advanced
HEXFET power MOSFET technology. The low onresistance
and low gate charge inherent to this
technology make this device ideal for low voltage or
battery driven power conversion applications
The SO-8 package with copper leadframe offers
enhanced thermal characteristics that allow power
dissipation of greater that 800mW in typical board
mount applications.
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现货供10毫欧级高品质30V/10A贴片MOS管仙童 FDS6690
信息内容：大批现货特价供应！ FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFETFeaturesAbsolute Maximum Ratings TA = 25oC unless other wise notedSymbol Parameter FDS6690 UnitsVDSS Drain-Source Voltage 30 VVGSS Gate-Source Voltage ±20 VID Drain Current - Continuous (Note 1a) 10 A - Pulsed 50PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2(Note 1c) 1TJ,TSTG Operating and Storage Temperature Range -55 to 150 °CTHERMAL CHARACTERISTICSRqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/WRqJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W FDS6690 Rev.C10 A, 30 V. RDS(ON) = 0.0135 W @ VGS = 10 VRDS(ON) = 0.0200 W @ VGS = 4.5 V.Optimized for use in switching DC/DC converters withPWM controllers.Very fast switching .Low gate charge (Qg typ = 13 nC).
场效应管UT3N06 大量热销 UTC（台湾友顺）
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