价 格: | 0.10 | |
型号/规格: | MJE13003L | |
品牌/商标: | (UTC台湾友顺) | |
封装形式: | TO-126 | |
环保类别: | 无铅环保型 | |
安装方式: | 直插式 | |
包装方式: | 散装 | |
功率特性: | 中功率 | |
频率特性: | | |
极性: | |
1、台产优质双极型功率三极管。
2、香港交货或大陆含税交货。
NPN SILICON POWER TRANSISTORS
DESCRIPTION
These devices are designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V SWITCHMODE.
FEATURES
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
VCBO -60 V VCEO -60 V/ DC IC -5 APulse(Note 2) ICP -8 A 2SD1691:LOW COLLECTOR SATURATION VOLTAGELARGE CURRENT?? FEATURES*High Power Dissipation*Complementary to 2SB1151 2SB1151:LOW COLLECTORSATURATION VOLTAGELARGE CURRENT?? FEATURES*High Power Dissipation*Complementary to 2SD1691
FeaturesType VDSS RDS(on) max IDSTS10N3LH5 30 V 0.021 Ω 10 A ■ RDS(on) * Qg industry benchmark■ Extremely low on-resistance RDS(on)■ Very low switching gate charge■ High avalanche ruggedness■ Low gate drive power lossesApplication■ Switching applicationsDescriptionThis STripFET™V Power MOSFET technology isamong the latest improvements, which have beenespecially tailored to achieve very low on-stateresistance providing also one of the best-in-classFOM.