价 格: | 0.10 | |
型号/规格: | 12N60 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-220F | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 管装 | |
功率特征: | |
12 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 12N65 are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced using UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
FEATURES
* RDS(ON) = 0.7Ω @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
8安培,600V或650V高压MOS管,酷MOS供应。超薄适配器,高效LED灯电源之热门。 General DescriptionThe series of devices use advanced super junctiontechnology and design to provide excellent RDS(ON) with lowgate charge. This super junction MOSFET fits the industry’sAC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applications.Features●New technology for high voltage device●Low on-resistance and low conduction losses●small package●Ultra Low Gate Charge cause lower driving requirements●100% Avalanche TestedApplication● Power factor correction(PFC)● Switched mode power supplies(SMPS)● Uninterruptible Power Supply(UPS)
7 Amps, 700 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 7N70 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM motor controls, highefficient DC to DC converters and bridge circuits.FEATURES* RDS(ON) = 1.5Ω @VGS = 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer capacitance ( CRSS = typical 18 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness