价 格: | 0.10 | |
型号/规格: | 2SB1116A | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-92 | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 散装 | |
功率特性: | | |
频率特性: | | |
极性: | |
1,和2SD1616/2SD1616A是对管。
2,0.2V超低压降.损耗小.
3,60V/80V高耐压!
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
Complement to UTC 2SD1616/A
600V N-Channel MOSFETFeatures■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V■ Gate charge (Typical 17nC)■ High ruggedness■ Fast switching■ 100% AvalancheTested■ Improved dv/dt capabilityGeneral DescriptionThis Power MOSFET is produced using Truesemi’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics, such as fast switching time,lowon resistance.low gate charge and especially excellent avalanchecharacteristics. This power MOSFET is usually used at ACadaptors, on the battery charger and SMPS
DESCRIPTIONUHE4913 is a low-power integrated Hall switch designed tosense the applied magnetic flux density and give a digital output,which indicates the present condition of the magnitude sensed.It is mainly designed for battery-powered system andhand-held equipment, such as cellular flip-phones and PDA’s, inwhich power consumption is one major concern. The typical powerconsumption of UHE4913 is down to 10μW in 2.7V supply.The output will be at the “High” level when no magnetic field isapplied. When the applied magnetic flux density is stronger thanthe switching threshold, the output would be at the “Low” level.FEATURES* Micropower Operation* 2.4V to 5.5V Battery Operation* Switching for both poles of magnet* Offset Canceling Technology* Superior Temperature Stability* Extremely Low Switch-Point Drift* Insensitive to Physical Stress