DESCRIPTION
UHE4913 is a low-power integrated Hall switch designed to
sense the applied magnetic flux density and give a digital output,
which indicates the present condition of the magnitude sensed.
It is mainly designed for battery-powered system and
hand-held equipment, such as cellular flip-phones and PDA’s, in
which power consumption is one major concern. The typical power
consumption of UHE4913 is down to 10μW in 2.7V supply.
The output will be at the “High” level when no magnetic field is
applied. When the applied magnetic flux density is stronger than
the switching threshold, the output would be at the “Low” level.
FEATURES
* Micropower Operation
* 2.4V to 5.5V Battery Operation
* Switching for both poles of magnet
* Offset Canceling Technology
* Superior Temperature Stability
* Extremely Low Switch-Point Drift
* Insensitive to Physical Stress
4 Amps, 600/650 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 4N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM motor controls, highefficient DC to DC converters and bridge circuits.FEATURES* RDS(ON) = 2.5Ω @VGS = 10 V* Ultra low gate charge ( typical 15 nC )* Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )* Fast switching capability* Avalanche energy Specified* Improved dv/dt capability, high ruggedness
FEATURES* Dual output: 3.3V/1A, 2.5V/1A.* Output voltage precision of ±2%.* Output consists of PNP power transistor with low-dropout voltage.* Built-in over current protection circuit (OCP).* Built-in thermal shut down circuit (TSD).* Ideal for hard disk drives applications