现货特价热销中 场效应管 5N60L TO-220F
| 价 格： | 0.10 | |
| 型号/规格： | 5N60L | |
| 品牌/商标： | UTC | |
| 封装形式： | TO-220F | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 盒带编带包装 | |
| 功率特征： | |
600V N-Channel MOSFET
Features
■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V
■ Gate charge (Typical 17nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
General Description
This Power MOSFET is produced using Truesemi’s advanced
planar stripe, DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics, such as fast switching time,low
on resistance.low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at AC
adaptors, on the battery charger and SMPS
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供应霍尔IC UHE4913 现货热销
信息内容：DESCRIPTIONUHE4913 is a low-power integrated Hall switch designed tosense the applied magnetic flux density and give a digital output,which indicates the present condition of the magnitude sensed.It is mainly designed for battery-powered system andhand-held equipment, such as cellular flip-phones and PDA’s, inwhich power consumption is one major concern. The typical powerconsumption of UHE4913 is down to 10μW in 2.7V supply.The output will be at the “High” level when no magnetic field isapplied. When the applied magnetic flux density is stronger thanthe switching threshold, the output would be at the “Low” level.FEATURES* Micropower Operation* 2.4V to 5.5V Battery Operation* Switching for both poles of magnet* Offset Canceling Technology* Superior Temperature Stability* Extremely Low Switch-Point Drift* Insensitive to Physical Stress
UTC品牌场效应管 MOS管 贴片4N60 TO-252
信息内容：4 Amps, 600/650 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 4N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM motor controls, highefficient DC to DC converters and bridge circuits.FEATURES* RDS(ON) = 2.5Ω @VGS = 10 V* Ultra low gate charge ( typical 15 nC )* Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )* Fast switching capability* Avalanche energy Specified* Improved dv/dt capability, high ruggedness
