让卖家找上门
发布询价>>
您所在的位置:仪器仪表网> 电子元器件>IRFB31N20DPBF - MOSFET, N

IRFB31N20DPBF - MOSFET, N

价 格: 15.00

品牌/商标 IR 型号/规格 IRFB31N20DPBF - MOSFET, N, 200V, 31A, TO-220
批号 08+ 封装 TO-220
营销方式 库存 产品性质 热销
类型 通信IC

Description

  • MOSFET, N, 200V, 31A, TO-220
  • Transistor Polarity:N
  • Max Current Id:31A
  • Max Voltage Vds:200V
  • On State Resistance:0.082ohm
  • Rds Measurement Voltage:10V
  • Max Voltage Vgs:5.5V
  • Power Dissipation:200W
  • Transistor Case Style:TO-220AB
  • No. of Pins:3
  • Case Style:TO-220AB
  • Cont Current Id:31A
  • Junction to Case Thermal Resistance A:0.75°C/W
  • Max Voltage Vgs th:5.5V
  • Power Dissipation Pd:200W
  • Pulse Current Idm:124A
  • Termination Type:Through Hole
  • Transistor Type:MOSFET
  • Typ Voltage Vds:200V
  • Typ Voltage Vgs th:5.5V
  • Voltage Vgs Rds on Measurement:10V

上海斯盖龙经贸有限公司
公司信息未核实
  • 所属城市:上海 上海市
  • [联系时请说明来自维库仪器仪表网]
  • 联系人: 侯林
  • 电话:21-58217591
  • 传真:21-58217591
  • 手机:
  • QQ :
公司相关产品

IRFRC20PBF - MOSFET, N, 6

信息内容:

品牌/商标 IR 型号/规格 IRFRC20PBF - MOSFET, N, 600V, 2A, D-PAK 批号 08+ 封装 D-PAK 营销方式 库存 产品性质 热销 类型 通信IC DescriptionMOSFET, N, 600V, 2A, D-PAKTransistor Polarity:NMax Voltage Vds:600VOn State Resistance:4.4ohmPower Dissipation:42WTransistor Case Style:D-PAKAlternate Case Style:D-PAKCase Style:DPAKCont Current Id:2ACurrent Temperature:25°CFull Power Rating Temperature:25°CJunction to Case Thermal Resistance A:3°C/WPower Dissipation Pd:42WPulse Current Idm:8ASMD Marking:IRFRC20Termination Type:SMDTransistor Type:MOSFETTyp Voltage Vds:600VTyp Voltage Vgs th:4VVoltage Vds:600VVoltage Vgs Rds on Measurement:10V

详细内容>>

IRFB23N20DPBF - MOSFET, N

信息内容:

品牌/商标 IR 型号/规格 IRFB23N20DPBF - MOSFET, N, 200V, 24A, TO-220 批号 08+ 封装 TO-220 营销方式 库存 产品性质 热销 类型 通信IC DescriptionMOSFET, N, 200V, 24A, TO-220Transistor Polarity:NMax Current Id:24AMax Voltage Vds:200VOn State Resistance:0.1ohmRds Measurement Voltage:10VMax Voltage Vgs:5.5VPower Dissipation:170WTransistor Case Style:TO-220ABNo. of Pins:3Case Style:TO-220ABCont Current Id:24AJunction to Case Thermal Resistance A:0.9°C/WMax Voltage Vgs th:5.5VPower Dissipation Pd:170WPulse Current Idm:96ATermination Type:Through HoleTransistor Type:MOSFETTyp Voltage Vds:200VTyp Voltage Vgs th:5.5VVoltage Vgs Rds on Measurement:10V

详细内容>>

相关产品