IRFB23N20DPBF - MOSFET, N
| 价 格： | 8.00 |
| 品牌/商标 | IR | 型号/规格 | IRFB23N20DPBF - MOSFET, N, 200V, 24A, TO-220 |
| 批号 | 08+ | 封装 | TO-220 |
| 营销方式 | 库存 | 产品性质 | 热销 |
| 类型 | 通信IC |
Description
- MOSFET, N, 200V, 24A, TO-220
- Transistor Polarity:N
- Max Current Id:24A
- Max Voltage Vds:200V
- On State Resistance:0.1ohm
- Rds Measurement Voltage:10V
- Max Voltage Vgs:5.5V
- Power Dissipation:170W
- Transistor Case Style:TO-220AB
- No. of Pins:3
- Case Style:TO-220AB
- Cont Current Id:24A
- Junction to Case Thermal Resistance A:0.9°C/W
- Max Voltage Vgs th:5.5V
- Power Dissipation Pd:170W
- Pulse Current Idm:96A
- Termination Type:Through Hole
- Transistor Type:MOSFET
- Typ Voltage Vds:200V
- Typ Voltage Vgs th:5.5V
- Voltage Vgs Rds on Measurement:10V
- 所属城市：上海 上海市
- [联系时请说明来自维库仪器仪表网]
- 联系人： 侯林
- 电话：21-58217591
- 传真：21-58217591
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FQD2N50 - MOSFET, N, D-P
信息内容：品牌/商标 仙童 型号/规格 FQD2N50 - MOSFET, N, D-PAK 批号 08+ 封装 D-PAK 营销方式 库存 产品性质 热销 类型 通信IC DescriptionMOSFET, N, D-PAKTransistor Polarity:NMax Voltage Vds:500VOn State Resistance:5.3ohmPower Dissipation:2.5WTransistor Case Style:D-PAKSVHC:Cobalt dichloride (18-Jun-2010)Alternate Case Style:D-PAKCase Style:DPAKCont Current Id:1.6AMax Voltage Vgs th:5VPower Dissipation Pd:2.5WPulse Current Idm:6.4ASMD Marking:FQD2N50Termination Type:SMDTransistor Type:MOSFETTyp Voltage Vds:500VTyp Voltage Vgs th:5VVoltage Vgs Rds on Measurement:10VSVHC (Secondary):Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
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