价 格: | 0.10 | |
型号/规格: | 1N60 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-251 | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 管装 | |
功率特征: | |
1.2 Amps, 600/650 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON)=11.5Ω@VGS= 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
Drain-Source Voltage 1N60-A VDSS,600V 1N60-B 650V
8安培,600V或650V高压MOS管,酷MOS供应。超薄适配器,高效LED灯电源之热门。 General DescriptionThe series of devices use advanced super junctiontechnology and design to provide excellent RDS(ON) with lowgate charge. This super junction MOSFET fits the industry’sAC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applications.Features●New technology for high voltage device●Low on-resistance and low conduction losses●small package●Ultra Low Gate Charge cause lower driving requirements●100% Avalanche TestedApplication● Power factor correction(PFC)● Switched mode power supplies(SMPS)● Uninterruptible Power Supply(UPS)
800V N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 10N80 uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device issuitable for use as a load switch or in PWM applications.FEATURES* RDS(ON) = 1.1Ω @VGS = 10 V* Ultra low gate charge ( typical 45 nC )* Low reverse transfer capacitance ( CRSS = typical 15 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness