价 格: | 0.10 | |
型号/规格: | 8N60 | |
品牌/商标: | NCE(新洁能) | |
封装形式: | TO-252 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
8安培,600V或650V高压MOS管,酷MOS供应。超薄适配器,高效LED灯电源之热门。
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
800V N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 10N80 uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device issuitable for use as a load switch or in PWM applications.FEATURES* RDS(ON) = 1.1Ω @VGS = 10 V* Ultra low gate charge ( typical 45 nC )* Low reverse transfer capacitance ( CRSS = typical 15 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
9A, 900V N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 9N90 uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device is suitablefor use as a load switch or in PWM applications.FEATURES* RDS(ON) = 1.4Ω @VGS = 10 V* Ultra Low Gate Charge ( Typical 45 nC )* Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF )* Fast Switching Capability* Avalanche Energy Specified* Improved dv/dt Capability, High Ruggedness