价 格: | 0.10 | |
型号/规格: | 10N80 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-220F | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 管装 | |
功率特征: | |
800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N80 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) = 1.1Ω @VGS = 10 V
* Ultra low gate charge ( typical 45 nC )
* Low reverse transfer capacitance ( CRSS = typical 15 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
9A, 900V N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 9N90 uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device is suitablefor use as a load switch or in PWM applications.FEATURES* RDS(ON) = 1.4Ω @VGS = 10 V* Ultra Low Gate Charge ( Typical 45 nC )* Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF )* Fast Switching Capability* Avalanche Energy Specified* Improved dv/dt Capability, High Ruggedness
7 Amps, 700 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 7N70 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM motor controls, highefficient DC to DC converters and bridge circuits.FEATURES* RDS(ON) = 1.5Ω @VGS = 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer capacitance ( CRSS = typical 18 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness