台湾友顺UTC一线代理热销MOS管12N65
| 价 格： | 0.10 | |
| 型号/规格： | 12N65 | |
| 品牌/商标： | UTC | |
| 封装形式： | TO-220F | |
| 环保类别： | 普通型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 盒带编带包装 | |
| 功率特征： | |
12 Amps, 650 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 12N65 are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced using UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
FEATURES
* RDS(ON) = 0.7Ω @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 于晶
- 电话：0755-29743120
- 传真：0755-29743152-808
- 手机：13802706767
- QQ ：
现货热销高品质80A/30V贴片MOS管NCE3080K
信息内容：1,长备现货，特价热销。 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTIONThe NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.GENERAL FEATURES● VDS =30V,ID =80ARDS(ON) < 6mΩ @ VGS=10VRDS(ON) < 9.5mΩ @ VGS=5V● High density cell design for ultra low Rdson● Fully characterized Avalanche voltage and current● Good stability and uniformity with high EAS● Excellent package for good heat dissipationApplication●Power switching application●Hard Switched and High Frequency Circuits●Uninterruptible Power Supply
UTC（台湾友顺）大功率三极管 BU508AFI
信息内容：SILICON DIFFUSED POWER TRANSISTORDESCRIPTIONThe UTC BU508AFI is high voltage, high speed switchingNPN transistors in a plastic envelope, primarily for use inhorizontal deflection circuites of colour television receivers.Features* TV color horizontal deflection.* With TO-3PML fully isolated package. Absolute Maximum Rating Tc=25°CPARAMETER SYMBOL VALUE UNITCollector-base voltage(VBE=0) VCBO 1500 VCollector-emitter voltage(IB=0) VCEO 700 VEmitter-base Voltage(IC=0) VEBO 10 VCollector peak current Icp 15 ACollector current Ic 8 ACollector power dissipation Pc 60 WJunction temperature Tj 150 °CStorage temperature Tstg -65~150 °C
