价 格: | 0.10 | |
型号/规格: | NCE3080K | |
品牌/商标: | NCE(新洁能) | |
封装形式: | TO-252 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特征: | |
1,长备现货,特价热销。
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =30V,ID =80A
RDS(ON) < 6mΩ @ VGS=10V
RDS(ON) < 9.5mΩ @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
●
Power switching application
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply
SILICON DIFFUSED POWER TRANSISTORDESCRIPTIONThe UTC BU508AFI is high voltage, high speed switchingNPN transistors in a plastic envelope, primarily for use inhorizontal deflection circuites of colour television receivers.Features* TV color horizontal deflection.* With TO-3PML fully isolated package. Absolute Maximum Rating Tc=25°CPARAMETER SYMBOL VALUE UNITCollector-base voltage(VBE=0) VCBO 1500 VCollector-emitter voltage(IB=0) VCEO 700 VEmitter-base Voltage(IC=0) VEBO 10 VCollector peak current Icp 15 ACollector current Ic 8 ACollector power dissipation Pc 60 WJunction temperature Tj 150 °CStorage temperature Tstg -65~150 °C
封装形式 TO-92SP UTC UNISONIC TECHNOLOGIES CO. LTD 1QW-R216-002,BMEDIUM POWER AMPLIFIERSTROBO FLASHDESCRIPTION* medium power amplifier applications* strobo flash applicationsFEATURES*Low Saturation Voltage: VCE(sat) = 0.27 V (max.),(Ic = 3A / IB =60 mA)