价 格: | 面议 | |
型号/规格: | BU508AFI | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-3PML | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 盘装 | |
功率特性: | | |
频率特性: | | |
极性: | |
SILICON DIFFUSED POWER TRANSISTOR
DESCRIPTION
The UTC BU508AFI is high voltage, high speed switching
NPN transistors in a plastic envelope, primarily for use in
horizontal deflection circuites of colour television receivers.
Features
* TV color horizontal deflection.
* With TO-3PML fully isolated package.
Absolute Maximum Rating Tc=25°C
PARAMETER SYMBOL VALUE UNIT
Collector-base voltage(VBE=0) VCBO 1500 V
Collector-emitter voltage(IB=0) VCEO 700 V
Emitter-base Voltage(IC=0) VEBO 10 V
Collector peak current Icp 15 A
Collector current Ic 8 A
Collector power dissipation Pc 60 W
Junction temperature Tj 150 °C
Storage temperature Tstg -65~150 °C
封装形式 TO-92SP UTC UNISONIC TECHNOLOGIES CO. LTD 1QW-R216-002,BMEDIUM POWER AMPLIFIERSTROBO FLASHDESCRIPTION* medium power amplifier applications* strobo flash applicationsFEATURES*Low Saturation Voltage: VCE(sat) = 0.27 V (max.),(Ic = 3A / IB =60 mA)
4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFETDESCRIPTIONThe N-Channel enhancement mode silicon gate power MOSFET isdesigned for high voltage, high speed power switching applications such asswitching regulators, switching converters, solenoid, motor drivers, relaydrivers.FEATURES* 4.5A, 500V, RDS(ON)=1.5Ω* Single Pulse Avalanche Energy Rated* Rugged- SOA is Power Dissipation Limited* Fast Switching Speeds* Linear Transfer Characteristics* High Input Impedance