价 格: | 面议 | |
型号/规格: | 2SD882 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-126,126C,92NL,251,252 | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 管装 | |
功率特性: | | |
频率特性: | | |
极性: | |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SB772S
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
MEDIUM POWER LOW VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB772 is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SD882
12 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTIONThe UTC 12N65 are N-Channel enhancement mode powerfield effect transistors (MOSFET) which are produced using UTC’sproprietary, planar stripe, DMOS technology.These devices are suited for high efficiency switch modepower supply. To minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in theavalanche and commutation mode the advanced technology hasbeen especially tailored.FEATURES* RDS(ON) = 0.7Ω @VGS = 10 V* Ultra low gate charge ( typical 42 nC )* Low reverse transfer capacitance ( CRSS = typical 25 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
1,长备现货,特价热销。 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTIONThe NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.GENERAL FEATURES● VDS =30V,ID =80ARDS(ON) < 6mΩ @ VGS=10VRDS(ON) < 9.5mΩ @ VGS=5V● High density cell design for ultra low Rdson● Fully characterized Avalanche voltage and current● Good stability and uniformity with high EAS● Excellent package for good heat dissipationApplication●Power switching application●Hard Switched and High Frequency Circuits●Uninterruptible Power Supply