价 格: | 面议 | |
型号/规格: | UT3055 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-251 | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
导电方式 | 耗尽型 |
NCE20N60F | TO-220F | |
NCE20N60T | TO-247 | |
NCE20N50 | TO-220 | |
NCE20N50F | TO-220F | |
NCE20N50T | TO-247 | |
NCE11N65 | SPA11N60C3 | TO-220 |
NCE11N60 | SPP11N60C3 | TO-220 |
SPP11N80C3 | ||
NCE07N65 | SPA07N60C3 | TO-220 |
NCE07N60 | TO-220 | |
NCE04N65 | SPS04N60C3 | TO-251 |
NCE04N60 | TO-251 | |
SPA12N50C3 | ||
NCE10G120 | HGTP10N120BN | TO-220 |
NCE20G120 | FGA20N120FTD | TO-247 |
NCE25G120 | FGA25N120ANTD | TO-247 |
P-CHANNEL ENHANCEMENT MODEDESCRIPTIONThe UTC UT3413 is P-channel enhancement mode PowerMOSFET, designed with high density cell, with fast switching speed,low on-resistance, excellent thermal and electrical capabilities andoperation with low gate voltages.This device is suitable for use as a load switch or in PWMapplications.
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORDESCRIPTIONThe UT3418 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with low gatevoltages. This device is suitable for use as a load switch or inPWM applications.FEATURES* RDS(ON) < 60mΩ @VGS = 10 V* RDS(ON) < 70mΩ @VGS = 4.5 V* RDS(ON) < 155mΩ @VGS = 2.5 V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified