价 格: | 面议 | |
型号/规格: | UT3418 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | SOT-23 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特征: | |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
The UT3418 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON) < 60mΩ @VGS = 10 V
* RDS(ON) < 70mΩ @VGS = 4.5 V
* RDS(ON) < 155mΩ @VGS = 2.5 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
1,UTC(台湾友顺)品牌高品质低压MOS管。 2,现货供应!全国支持支付宝,珠三角支持快递代收款。 50 Amps, 60 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 50N06 is three-terminal silicon device with currentconduction capability of about 50A, fast switching speed. Lowon-state resistance, breakdown voltage rating of 60V, and maxthreshold voltages of 4 volt.It is mainly suitable electronic ballast, and low power switchingmode power appliances.FEATURES* RDS(ON) =23mΩ@VGS= 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer capacitance ( CRSS = typical 80 pF )* Fast switching capability* 100% avalanche energy specified* Improved dv/dt capability
9A, 900V N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 9N90 uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device is suitablefor use as a load switch or in PWM applications.FEATURES* RDS(ON) = 1.4Ω @VGS = 10 V* Ultra Low Gate Charge ( Typical 45 nC )* Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF )* Fast Switching Capability* Avalanche Energy Specified* Improved dv/dt Capability, High Ruggedness